Product Information

SMBJ14A R5

SMBJ14A R5 electronic component of Taiwan Semiconductor

Datasheet
Diode TVS Single Uni-Dir 14V 600W 2-Pin SMB T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

850: USD 0.0819 ea
Line Total: USD 69.61

0 - Global Stock
MOQ: 850  Multiples: 850
Pack Size: 850
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 850
Multiples : 850

Stock Image

SMBJ14A R5
Taiwan Semiconductor

850 : USD 0.0819

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Polarity
Breakdown Voltage
Clamping Voltage
Packaging
Brand
Mounting Style
Leakage Current Max
Peak Pulse Current
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Peak Pulse Power Dissipation
Package Type
Rad Hardened
Test Current It
Reverse Stand-Off Voltage
Pin Count
LoadingGif

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SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS Ideal for automated placement PARAMETER VALUE UNIT Glass passivated junction 5 - 170 V V WM Excellent clamping capability 6.4 231 V V (uni - directional) Fast response time: Typically less than 1.0ps BR Typical I less than 1A above 10V R 6.4 231 V V (bi - directional) BR Moisture sensitivity level: level 1, per J-STD-020 600 W P PK AEC-Q101 qualified available: 150 C T ordering code with suffix H J MAX Compliant to RoHS Directive 2011/65/EU and Package DO-214AA (SMB) in accordance to WEEE 2002/96/EC Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.09 g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Non-repetitive peak impulse power dissipation with (1) P 600 W PK 10/1000s waveform Steady state power dissipation at T =25C 3 A P W D Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load for Uni-directional only (2) Forward Voltage I =50A for Uni-directional only V 3.5 / 5.0 V F F Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG Notes: 1. Non-repetitive current pulse per Fig. 3 and derated above T =25C per Fig. 2 A 2. V =3.5V on SMBJ5.0 - SMBJ90 devices and V =5.0V on SMBJ100 - SMBJ170 devices F F Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions 1 Version: P1812 SMBJ SERIES Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-Case Thermal Resistance R 10 C/W JC Junction-to-Ambient Thermal Resistance R 55 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Maximum Maximum Breakdown voltage Working peak Maximum blocking V I BR T Test current stand-off impulse clamping leakage (V) Part number Marking code I voltage current voltage T current (Note 1) (mA) V I V I WM PP C PP I V D WM (V) (A) (V) (A) (Note 2) Min. Max. SMBJ5.0 KD 6.40 7.30 10 5.0 800 65.0 9.6 SMBJ5.0A KE 6.40 7.00 10 5.0 800 68.0 9.2 SMBJ6.0 KF 6.67 8.15 10 6.0 800 55.0 11.4 SMBJ6.0A KG 6.67 7.37 10 6.0 800 61.0 10.3 SMBJ6.5 KH 7.22 8.82 10 6.5 500 51.0 12.3 SMBJ6.5A KK 7.22 7.98 10 6.5 500 56.0 11.2 SMBJ7.0 KL 7.78 9.51 10 7.0 200 47.0 13.3 SMBJ7.0A KM 7.78 8.60 10 7.0 200 52.0 12.0 SMBJ7.5 KN 8.33 10.3 1 7.5 100 44.0 14.3 SMBJ7.5A KP 8.33 9.21 1 7.5 100 48.0 12.9 SMBJ8.0 KQ 8.89 10.9 1 8.0 50 42.0 15.0 SMBJ8.0A KR 8.89 9.83 1 8.0 50 46.0 13.6 SMBJ8.5 KS 9.44 11.5 1 8.5 10 39.0 15.9 SMBJ8.5A KT 9.44 10.4 1 8.5 10 43.0 14.4 SMBJ9.0 KU 10.0 12.2 1 9.0 5 37.0 16.9 SMBJ9.0A KV 10.0 11.1 1 9.0 5 40.0 15.4 SMBJ10 KW 11.1 13.6 1 10 5 33.0 18.8 SMBJ10A KX 11.1 12.3 1 10 5 37.0 17.0 SMBJ11 KY 12.2 14.9 1 11 1 31.0 20.1 SMBJ11A KZ 12.2 13.5 1 11 1 34.0 18.2 SMBJ12 LD 13.3 16.3 1 12 1 28.0 22.0 SMBJ12A LE 13.3 14.7 1 12 1 31.0 19.9 SMBJ13 LF 14.4 17.6 1 13 1 26.0 23.8 SMBJ13A LG 14.4 15.9 1 13 1 29.0 21.5 SMBJ14 LH 15.6 19.1 1 14 1 24.4 25.8 SMBJ14A LK 15.6 17.2 1 14 1 27.0 23.2 SMBJ15 LL 16.7 20.4 1 15 1 23.1 26.9 SMBJ15A LM 16.7 18.5 1 15 1 25.1 24.4 SMBJ16 LN 17.8 21.8 1 16 1 21.8 28.8 SMBJ16A LP 17.8 19.7 1 16 1 24.2 26.0 SMBJ17 LQ 18.9 23.1 1 17 1 20.0 30.5 SMBJ17A LR 18.9 20.9 1 17 1 22.8 27.6 SMBJ18 LS 20.0 24.4 1 18 1 19.5 32.2 SMBJ18A LT 20.0 22.1 1 18 1 21.5 29.2 SMBJ20 LU 22.2 27.1 1 20 1 17.6 35.8 SMBJ20A LV 22.2 24.5 1 20 1 19.4 32.4 SMBJ22 LW 24.4 29.8 1 22 1 15.0 39.4 SMBJ22A LX 24.4 26.9 1 22 1 17.7 35.5 SMBJ24 LY 26.7 32.6 1 24 1 14.6 43.0 SMBJ24A LZ 26.7 29.5 1 24 1 16.0 38.9 SMBJ26 MD 28.9 35.3 1 26 1 13.5 46.6 SMBJ26A ME 28.9 31.9 1 26 1 14.9 42.1 2 Version: P1812

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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