Product Information

SMB10J16AHR5G

SMB10J16AHR5G electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors TVS Diodes 1000W 18.8V 5% Unidirectional TVS

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.217 ea
Line Total: USD 1.22

3491 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3466 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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SMB10J16AHR5G
Taiwan Semiconductor

1 : USD 0.406
10 : USD 0.4025
1000 : USD 0.399
3400 : USD 0.3668

     
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SMB10J SERIES Taiwan Semiconductor CREAT BY ART 1000W Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Excellent clamping capability - Fast response time: typically less than 1.0ps - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 DO-214AA (SMB) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Weight: 0.11 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Peak power dissipation at T =25C, tp=1ms (Note 1) P 1000 W A PK Steady state power dissipation P 5 W D Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Maximum instantaneous forward voltage at 50 A for V 3.5 V F unidirectional only R JL 20 Typical thermal resistance C/W R 100 JA Operating junction temperature range T - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Non-repetitive current pulse per fig. 3 and derated above T =25C per fig. 2 A Devices for bipolar applications 1. For bidirectional use CA suffix ORDERING INFORMATION PACKING CODE PART NO. PART NO. PACKING CODE PACKAGE PACKING (*) SUFFIX SUFFIX R5 SMB 850 / 7 Plastic reel SMB10J30A H R4 G SMB 3,000 / 13 Paper reel M4 SMB 3,000 / 13 Plastic reel *: Optional available EXAMPLE PART NO. PACKING CODE EXAMPLE P/N PART NO. PACKING CODE DESCRIPTION SUFFIX SUFFIX AEC-Q101 qualified SMB10J30AHR5G SMB10J30A H R5 G Green compound Version: A1511SMB10J SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.2 PULSE DERATING CURVE FIG. 1 PEAK PULSE POWER RATING CURVE 100 125 Non-reperirive pulse waveform 100 shown in fig.3 75 10 50 25 0 1 0 25 50 75 100 125 150 175 200 1 10 100 1000 tp, PULSE WIDTH, (s) T , AMBIENT TEMPERATURE ( C) A FIG. 4 MAXIMUM NON-REPETITIVE FORWARD FIG. 3 CLAMPING POWER PULSE WAVEFORM SURGE CURRENT UNIDIRECTIONAL ONLY 100 Pulse width(td) is defined 140 as the point where the peak tr=10s current decays to 50% of I PPM 120 Peak value I PPM 100 Half value-I /2 PPM 80 10/1000s, waveform as defined by R.E.A. 60 40 20 8.3ms single half sine wave td 10 0 1 10 100 00.5 11.5 22.5 33.5 4 t, TIME ms NUMBER OF CYCLES AT 60 Hz Version: A1511 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW PPM PEAK PULSE POWER(P ) OR CURRENT (I ) A PP PP DERATING IN PERCENTAGE (%) IFSM, PEAK FORWARD SURGE CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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