Product Information

SMA6J12A R3G

SMA6J12A R3G electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 600W,12V,5%,UNIDIR, TVS

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6822 ea
Line Total: USD 0.68

593 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

SMA6J12A R3G
Taiwan Semiconductor

1 : USD 0.4818
10 : USD 0.4037
100 : USD 0.3184
500 : USD 0.2791
1000 : USD 0.2723
3600 : USD 0.2676
7200 : USD 0.2622
21600 : USD 0.2622
46800 : USD 0.2622

3 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

SMA6J12A R3G
Taiwan Semiconductor

1 : USD 0.7763

593 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SMA6J12A R3G
Taiwan Semiconductor

1 : USD 0.6822
10 : USD 0.6099
100 : USD 0.5529
500 : USD 0.4307
1000 : USD 0.3548
3600 : USD 0.2918
7200 : USD 0.2599
21600 : USD 0.2539
46800 : USD 0.2515

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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SMA6J SERIES Taiwan Semiconductor CREAT BY ART Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - 600 watts peak pulse power capability with a 10 / 1000 s waveform - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC DO-214AC (SMA) - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL Value UNIT Peak power dissipation at T =25C, tp=1ms(Note 1) P 600 Watts A PK Steady state power dissipation P 4 Watts D Peak forward surge current, 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load R 56 JA Typcial thermal resistance C/W R 20 JL Operating junction temperature range T - 55 to +175 C J T Storage temperature range - 55 to +175 C STG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25C Per Fig. 2 A Document Number: DS D1502001 Version: A15SMA6J SERIES Taiwan Semiconductor CREAT BY ART ORDER INFORMATION (EXAMPLE) SMA6J26A R3G Greencompoundcode Packingcode Partno. RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE FIG. 1 PEAK PULSE POWER RATING CURVE CURRENT UNIDIRECTIONAL ONLY 100 50 NON-REPETITIVE PULSE WAVEFORM 8.3ms Single Half Sine Wave SHOWN in FIG.3 40 10 30 20 1 10 0. 1 0 0. 1 1 10 100 1000 10000 1 10 100 tp, PULSE WIDTH, (uS) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL JUNCTION CAPACITANCE FIG. 3 CLAMPING POWER PULSE WAVEFORM 10000 PULSE WIDTH(td) is DEFINED 140 as the POINT WHERE the PEAK tr=10s CURRENT DECAYS to 50% OF IPPM 120 Peak Value I PPM 100 1000 Half Value-I /2 PPM 80 10/1000s, WAVEFORM as DEFINED by R.E.A. 60 100 40 f=1.0MHz Vsig=50mVp-p 20 10 td 0 1 10 100 0 0.5 11.5 22.5 33.5 4 V( ), BREAKDOWN VOLTAGE (V) BR t, TIME ms Document Number: DS D1502001 Version: A15 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW PPM IFSM, PEAK FORWARD SURGE CURRENT (A) CJ, JUNCTION CAPACITANCE (pF) A

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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