Product Information

P6KE7.5A R0

P6KE7.5A R0 electronic component of Taiwan Semiconductor

Datasheet
Diode TVS Single Uni-Dir 6.4V 600W 2-Pin DO-15

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0 - WHS 1

MOQ : 2825
Multiples : 2825

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P6KE7.5A R0
Taiwan Semiconductor

2825 : USD 0.1321
N/A

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Polarity
Breakdown Voltage
Clamping Voltage
Brand
Leakage Current Max
Mounting
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Operating Temperature Classification
Peak Pulse Power Dissipation
Peak Pulse Current
Reverse Stand-Off Voltage
Test Current It
Rad Hardened
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P6KE SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to V for unidirectional BR and 5.0ns for bidirectional - Typical I less than 1A above 10V R - UL recognized file # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition DO-204AC (DO-15) MECHANICAL DATA Case: DO-204AC (DO-15) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix on packing code meet JESD 201 class 2 whisker test Weight: 0.4g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Peak power dissipation at T =25, Tp=1ms (Note 1) P 600 Watts A PK Steady state power dissipation at T =75 L P 5 Watts D lead lengths .375", 9.5mm (Note 2) Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load (Note 3) O Operating junction temperature range T - 55 to +175 J C O Storage temperature range T - 55 to +175 C STG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 Per Fig. 2 A Note 2: Mounted on 5 x 5 mm Copper Pads to Each Terminal Note 3: 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types P6KE6.8 through Types P6KE440 2. Electrical Characterstics Apply in Both Directions ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE A0 DO-15 1,500 / Ammo box P6KExxxx Prefix R0 Suffix DO-15 3,500 / 13" Paper reel (Note 1) B0 DO-15 1,000 / Bulk packing Note 1:xxx defines voltage from 6.8V (P6KE6.8) to 440V (P6KE440) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED CODE P6KE56A A0 A0 P6KE56A P6KE56A A0G P6KE56A A0 G Green compound P6KE56AHA0 H A0 AEC-Q101 qualified P6KE56A Document Number: DS_D1405018 Version: J14P6KE SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 TA= 25 10 75 50 1 25 0 0. 1 0 25 50 75 100 125 150 175 200 0. 1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) A tp, PULSE WIDTH, (uS) FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY PULSE WIDTH(td) is DEFINED 100 140 tr=10sec as the POINT WHERE the PEAK 8.3ms Single Half Sine Wave CURRENT DECAYS to 50% OF IPPM 120 Peak Value IPPM 100 Half Value-IPPM/2 80 10/1000s WAVEFORM as DEFINED by R.E.A. 60 40 20 td 0 10 0 0.511.522.533.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 10000 VR=0 1000 MEASURED at 100 STAND-OFF VOLTAGE,Vwm f=1.0MHz Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Document Number: DS_D1405018 Version: J14 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PPM IFSM, PEAK FORWARD SURGE CURRENT PEAK PULSE POWER(P ) or CURRENT(I ) PP PPM (A) DERATING IN PERCENTAGE(%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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