Product Information

HER104G

HER104G electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 1.0 Amp 300 Volt 30 Amp IFSM

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.5216 ea
Line Total: USD 2.61

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 5
Multiples : 1

Stock Image

HER104G
Taiwan Semiconductor

5 : USD 0.5216
100 : USD 0.2293
250 : USD 0.1785
500 : USD 0.154
1000 : USD 0.137
3000 : USD 0.1278

     
Manufacturer
Product Category
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Repetitive Reverse Voltage Vrrm Max
Reverse Recovery Time Trr Max
Diode Case Style
No Of Pins
Automotive Qualification Standard
Svhc
Current Ifsm
External Diameter
External Length / Height
Junction Temperature Tj Max
Junction Temperature Tj Min
Junction To Case Thermal Resistance A
Operating Temperature Range
Termination Type
LoadingGif

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Diode Fast Features: Glass passivated chip junction High efficiency, low V F High current capability High reliability High surge current capability For use in low voltage, high frequency inventor , free wheeling, and polarity protection application Specifications: Mechanical Data: Cases : Moulded plastic DO-41 Lead : Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity : Colour band denotes cathode end High temperature soldering guaranteed : 260C/10 seconds/0.375, (9.5mm) lead lengths at 5lbs., (2.3kg) tension Weight : 0.34g Maximum Ratings and Electrical Characteristics: Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Type Number Symbol HER102G HER104G HER106G HER108G Units Maximum Recurrent Peak Reverse Voltage V 100 300 600 1,000 rrm Maximum RMS Voltage V 70 210 420 700 V rms Maximum DC Blocking Voltage 100 300 600 1,000 V dc Maximum Average Forward Rectified Current 0.375 (9.5mm) Lead Length 1 I (va ) at T = 55C a A Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on Rated Load I 30 fsm (JEDEC method ) Maximum Instantaneous Forward Voltage 1 1.7 V V f at 1A www.element14.com www.farnell.com www.newark.com Page <1> 08/02/13 V1.0Diode Fast Type Number Symbol HER102G HER104G HER106G HER108G Units Maximum DC Reverse Current at T = 25C 5 A a I r 150 A at Rated DC Blocking Voltage at T = 125C a Maximum Reverse Recovery Time (Note 1) 50 75 nS T rr Typical Junction Capacitance (Note 2) 15 10 pF C j R 70 JA Typical Thermal Resistance C/W 15 R JC Operating Temperature Range T j -65 to +150 C Storage Temperature Range T stg Note: 1. Reverse Recovery Test Conditions: I = 0.5A, I = 1A, I = 0.25A. F R RR Note: 2. Measured at 1MHz and Applied Reverse Voltage of 4V DC. Note: 3. Mount on Cu-Pad Size 5mm 5mm on PCB. Ratings and Characteristic Curves (HER102G, HER104G, HER106G, HER108G) www.element14.com www.farnell.com www.newark.com Page <2> 08/02/13 V1.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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