GP1001 GP1007 Taiwan Semiconductor 10A, 50V - 1000V Standard Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT High efficiency, low V F I 10 A F High current capability V 50 - 1000 V RRM High surge current capability Low power loss I 125 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package TO-220AB Configuration Dual dies APPLICATIONS DC to DC converters Switching mode converters and inverters General purpose MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.82g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A GP GP GP GP GP GP GP PARAMETER SYMBOL UNIT 1001 1002 1003 1004 1005 1006 1007 GP GP GP GP GP GP GP Marking code on the device 1001 1002 1003 1004 1005 1006 1007 Repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Reverse voltage, total rms value V 35 70 140 280 420 560 700 V R(RMS) Forward current I 10 A F Surge peak forward current, 8.3ms single half sine wave I 125 A FSM superimposed on rated load Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version: G2104 GP1001 GP1007 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case thermal resistance R 3 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) Forward voltage per diode I = 5A, T = 25C V - 1.1 V F J F T = 25C - 5 A J (2) Reverse current rated V per diode I R R T = 125C - 200 A J Junction capacitance per diode 1MHz, V = 4.0V C 30 - pF R J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING GP10x TO-220AB 50 / Tube TO-220AB GP10xH 50 / Tube Notes: 1. x defines voltage from 50V(GP1001) to 1000V(GP1007) 2. H means AEC-Q101 qualified 2 Version: G2104