Product Information

BZV55C18 L1

BZV55C18 L1 electronic component of Taiwan Semiconductor

Datasheet
Zener Diodes MMELF 500mW 5% Small Signal Zener Diode

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

15000: USD 0.0729 ea
Line Total: USD 1093.5

0 - Global Stock
MOQ: 15000  Multiples: 15000
Pack Size: 15000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 15000
Multiples : 15000

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BZV55C18 L1
Taiwan Semiconductor

15000 : USD 0.0675
30000 : USD 0.0628
60000 : USD 0.0605

     
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RoHS - XON
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Voltage Tolerance
Pd - Power Dissipation
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BZV55C2V4 - BZV55C75 Taiwan Semiconductor 500mW, 5% Tolerance SMD Zener Diodes FEATURES KEY PARAMETERS Wide Zener voltage range selection: 2.4V to 75V PARAMETER VALUE UNIT V tolerance selection of 5% Z V 2.4-75 V Z Compliant to RoHS directive 2011/65/EU and Test current I 5 mA ZT in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 P 500 mW D V at I =10mA 1 V F F APPLICATIONS T Max. 175 C J Low voltage stabilizers or voltage references Package Mini-MELF Adapters Configuration Single die On-board DC/DC converter MECHANICAL DATA Case: Mini-MELF Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 31mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Forward voltage I =10mA F V 1 V F Power dissipation P 500 mW D Junction temperature range T -65 to +175 C J Storage temperature range T -65 to +175 C STG THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 300 C/W JA 1 Version: G1804 BZV55C2V4 - BZV55C75 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A TEST REGULAR TEST LEAKAGE ZENER VOLTAGE CURRENT IMPEDANCE CURRENT CURRENT PART NUMBER V I I Z I Z I I I V Z ZT ZT ZT ZT ZK ZK ZK R R V mA mA A V Min. Nom. Max. Max. Max. Max. BZV55C2V4 2.28 2.4 2.56 5 85 600 1.0 50 1.0 BZV55C2V7 2.51 2.7 2.89 5 85 600 1.0 10 1.0 BZV55C3V0 2.8 3.0 3.2 5 85 600 1.0 4 1.0 BZV55C3V3 3.1 3.3 3.5 5 85 600 1.0 2 1.0 BZV55C3V6 3.4 3.6 3.8 5 85 600 1.0 2 1.0 BZV55C3V9 3.7 3.9 4.1 5 85 600 1.0 2 1.0 BZV55C4V3 4.0 4.3 4.6 5 75 600 1.0 1 1.0 BZV55C4V7 4.4 4.7 5.0 5 60 600 1.0 0.5 1.0 BZV55C5V1 4.8 5.1 5.4 5 35 550 1.0 0.1 1.0 BZV55C5V6 5.2 5.6 6.0 5 25 450 1.0 0.1 1.0 BZV55C6V2 5.8 6.2 6.6 5 10 200 1.0 0.1 2.0 BZV55C6V8 6.4 6.8 7.2 5 8 150 1.0 0.1 3.0 BZV55C7V5 7.0 7.5 7.9 5 7 50 1.0 0.1 5.0 BZV55C8V2 7.7 8.2 8.7 5 7 50 1.0 0.1 6.2 BZV55C9V1 8.5 9.1 9.6 5 10 50 1.0 0.1 6.8 BZV55C10 9.4 10 10.6 5 15 70 1.0 0.1 7.5 BZV55C11 10.4 11 11.6 5 20 70 1.0 0.1 8.2 BZV55C12 11.4 12 12.7 5 20 90 1.0 0.1 9.1 BZV55C13 12.4 13 14.1 5 26 110 1.0 0.1 10 BZV55C15 13.8 15 15.6 5 30 110 1.0 0.1 11 BZV55C16 15.3 16 17.1 5 40 170 1.0 0.1 12 BZV55C18 16.8 18 19.1 5 50 170 1.0 0.1 13 BZV55C20 18.8 20 21.1 5 55 220 1.0 0.1 15 BZV55C22 20.8 22 23.3 5 55 220 1.0 0.1 16 BZV55C24 22.8 24 25.6 5 80 220 1.0 0.1 18 BZV55C27 25.1 27 28.9 5 80 220 1.0 0.1 20 BZV55C30 28 30 32 5 80 220 1.0 0.1 22 BZV55C33 31 33 35 5 80 220 1.0 0.1 24 BZV55C36 34 36 38 5 80 220 1.0 0.1 27 BZV55C39 37 39 41 2.5 90 500 0.5 0.1 28 BZV55C43 40 43 46 2.5 90 600 0.5 0.1 32 BZV55C47 44 47 50 2.5 110 700 0.5 0.1 35 BZV55C51 48 51 54 2.5 125 700 0.5 0.1 38 BZV55C56 52 56 60 2.5 135 1,000 0.5 0.1 42 BZV55C62 58 62 66 2.5 150 1,000 0.5 0.1 47 BZV55C68 64 68 72 2.5 160 1,000 0.5 0.1 51 BZV55C75 70 75 80 2.5 170 1,000 0.5 0.1 56 2 Version: G1804

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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