Product Information

BZT52B39 RHG

BZT52B39 RHG electronic component of Taiwan Semiconductor

Datasheet
Zener Diodes SOD-123F 500mW 2% Small Signal Zener Diode

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.21 ea
Line Total: USD 0.21

5742 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5742 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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BZT52B39 RHG
Taiwan Semiconductor

1 : USD 0.21
10 : USD 0.1423
100 : USD 0.0581
1000 : USD 0.0415
3000 : USD 0.0332
9000 : USD 0.0285
45000 : USD 0.0249
99000 : USD 0.0237

     
Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Pd - Power Dissipation
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Packaging
Minimum Operating Temperature
Test Current
Series
Ir - Maximum Reverse Leakage Current
Hts Code
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BZT52B2V4 - BZT52B75 Taiwan Semiconductor Small Signal Product 500mW, 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant - V Tolerance Selection of 2% Z - Matte tin (Sn) lead finish with Nickel (Ni) under plate - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC SOD-123F - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA - Case: Flat lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s - Polarity: Indicated by cathode band - Weight : 8.85 0.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Forward voltage I = 10mA V 1 V F F Power dissipation P 500 mW D Thermal resistance from junction to ambient (Note 1) R 350 C/W JA Junction temperature T 150 C J Storage temperature T - 65 to +150 C STG Notes: 1. Valid provided that electrodes are kept at ambient temperature ZENER I vs. V CHARACTERISTICS : Voltage at I V ZK BR I : Test current for voltage V ZK BR Z : Dynamic impedance at I ZK ZK I : Test current for voltage V ZT Z V : Voltage at current I Z ZT Z : Dynamic impedance at I ZT ZT I : Maximum steady state current ZM : Voltage at I V ZM ZM Document Number: DS S1405026 Version: F15BZT52B2V4 - BZT52B75 Taiwan Semiconductor Small Signal Product ELECTRICAL CHARACTERISTICS (Ratings at T =25C ambient temperature unless otherwise specified, A and V Forward Voltage = 1V Maximum I = 10 mA for all part numbers) F F Maximum reverse Zener voltage range Maximum zener impedance current Device Marking type code V I I Z I Z I I I V Z ZT ZT ZT ZT ZK ZK ZK R R Ohm Min (V) Nom (V) Max (V) mA mA AV BZT52B2V4 2V4B 2.35 2.40 2.45 5 100 564 1 45 1 BZT52B2V7 2V7B 2.65 2.70 2.75 5 100 564 1 18 1 BZT52B3V0 3V0B 2.94 3.00 3.06 5 100 564 1 9 1 BZT52B3V3 3V3B 3.23 3.30 3.37 5 95 564 1 4.5 1 BZT52B3V6 3V6B 3.53 3.60 3.67 5 90 564 1 4.5 1 BZT52B3V9 3V9B 3.82 3.90 3.98 5 90 564 1 2.7 1 BZT52B4V3 4V3B 4.21 4.30 4.39 5 90 564 1 2.7 1 BZT52B4V7 4V7B 4.61 4.70 4.79 5 80 470 1 2.7 2.0 BZT52B5V1 5V1B 5.00 5.10 5.20 5 60 451 1 1.8 2.0 BZT52B5V6 5V6B 5.49 5.60 5.71 5 40 376 1 0.9 2.0 BZT52B6V2 6V2B 6.08 6.20 6.32 5 10 141 1 2.7 4.0 BZT52B6V8 6V8B 6.66 6.80 6.94 5 15 75 1 1.8 4.0 BZT52B7V5 7V5B 7.35 7.50 7.65 5 15 75 1 0.9 5.0 BZT52B8V2 8V2B 8.04 8.20 8.36 5 15 75 1 0.63 5.0 BZT52B9V1 9V1B 8.92 9.10 9.28 5 15 94 1 0.45 6.0 BZT52B10 10VB 9.80 10.00 10.20 5 20 141 1 0.18 7.0 BZT52B11 11VB 10.78 11.00 11.22 5 20 141 1 0.09 8.0 BZT52B12 12VB 11.76 12.00 12.24 5 25 141 1 0.09 8.0 BZT52B13 13VB 12.74 13.00 13.26 5 30 160 1 0.09 8.0 BZT52B15 15VB 14.70 15.00 15.30 5 30 188 1 0.045 10.5 BZT52B16 16VB 15.68 16.00 16.32 5 40 188 1 0.045 11.2 BZT52B18 18VB 17.64 18.00 18.36 5 45 212 1 0.045 12.6 BZT52B20 20VB 19.60 20.00 20.40 5 55 212 1 0.045 14.0 BZT52B22 22VB 21.56 22.00 22.44 5 55 235 1 0.045 15.4 BZT52B24 24VB 23.52 24.00 24.48 5 70 235 1 0.045 16.8 BZT52B27 27VB 26.46 27.00 27.54 2 80 282 0.5 0.045 18.9 BZT52B30 30VB 29.40 30.00 30.60 2 80 282 0.5 0.045 21.0 BZT52B33 33VB 32.34 33.00 33.66 2 80 306 0.5 0.045 23.0 BZT52B36 36VB 35.28 36.00 36.72 2 90 329 0.5 0.045 25.2 BZT52B39 39VB 38.22 39.00 39.78 2 130 329 0.5 0.045 27.3 BZT52B43 43VB 42.14 43.00 43.86 2 150 353 0.5 0.045 30.1 BZT52B47 47VB 46.06 47.00 47.94 2 170 353 0.5 0.045 33.0 BZT52B51 51VB 49.98 51.00 52.02 2 180 376 0.5 0.045 35.7 BZT52B56 56VB 54.88 56.00 57.12 2 200 400 0.5 0.045 39.2 BZT52B62 62VB 60.76 62.00 63.24 2 215 423 0.5 0.045 43.4 BZT52B68 68VB 66.64 68.00 69.36 2 240 447 0.5 0.045 47.6 BZT52B75 75VB 73.50 75.00 76.50 2 255 470 0.5 0.045 52.5 Notes 1. The Zener Voltage (V ) is tested under pulse condition of 10ms. Z 2. The device numbers listed have a standard tolerance on the normal zener voltage of 2%. 3. For detailed information on price, availability and delivery of normal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current is superimposed to I or I . ZT ZK Document Number: DS S1405026 Version: F15

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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