Product Information

BAV101

BAV101 electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor Diodes - General Purpose, Power, Switching 1500W 20V 5% UNI TRANSZORB-TVS

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

90000: USD 0.0255 ea
Line Total: USD 2295

0 - Global Stock
MOQ: 90000  Multiples: 90000
Pack Size: 90000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 90000
Multiples : 90000

Stock Image

BAV101
Taiwan Semiconductor

90000 : USD 0.0249
100000 : USD 0.0226

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
Taric
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BAV101/BAV103 Taiwan Semiconductor 200mA, 250V Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 200 mA F(AV) High surge current capability V 250 V RRM Compliance to RoHS directive 2011/65/EU and I 4 A in accordance to WEEE 2002/96/EC FSM Halogen-free according to IEC 61249-2-21 V at I =100mA 1.00 V F F T 200 C APPLICATIONS J MAX Switching mode power supply (SMPS) Package MINI MELF Adapters Configuration Single dice Lighting application On-board DC/DC converter MECHANICAL DATA Case: MINI MELF Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 0.06 (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PART NUMBER UNIT Repetitive peak reverse voltage V 250 V RRM Forward current I 200 mA F(AV) Non-repetitive peak forward Pulse width = 1.0 s 1 I A FSM surge current Pulse width = 1.0 s 4 Junction temperature range T -65 ~ 200 C J Storage temperature range T -65 ~ 200 C STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R 300 C/W JA 1 Version:D1610 BAV101/BAV103 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) I = 100mA, T = 25C -- 1 Forward voltage per diode V V F J F BAV101 -- 100 nA V =100V T = 25C Reverse current rated V per R R J I R (2) diode BAV103 100 -- nA V =200V T = 25C R J 1 MHz, V =0V 4 Junction capacitance C -- F R J Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PACKING PACKING CODE PART NO. PACKAGE PACKING CODE SUFFIX 10K / 13 Reel L0 BAV10X G MINI MELF (Note 1&2) 2.5K / 7 Reel L1 Notes: 1. is device code is1 &3 2. Whole series with green compound EXAMPLE PACKING CODE EXAMPLE P/N PART NO. PACKING CODE DESCRIPTION SUFFIX BAV101 L0G BAV101 L0 G Green compound 2 Version:D1610

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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