Product Information

BAT43W

Name: BAT43W
Brand: Taiwan Semiconductor
SKU: BAT43W_TaiwanSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

BAT43W electronic component of Taiwan Semiconductor

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Taiwan Semiconductor Schottky Diodes & Rectifiers Schottky 200wW

Manufacturer: Taiwan Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.0452 ea
Line Total: USD 135.6

0 - Global Stock

MOQ: 3000 Multiples: 3000
Pack Size: 3000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Wed. 15 May to Fri. 17 May MOQ : 3000 Multiples : 3000 BAT43W Taiwan Semiconductor	3000 : USD 0.0506 9000 : USD 0.0425 45000 : USD 0.0379 99000 : USD 0.0333

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Additional Infomation About Product

BAT42W/BAT43W Taiwan Semiconductor Small Signal Product Surface Mount, Switching Schottky Barrier Diode FEATURES - Low forward voltage drop - Surface mount device type - Moisture sensitivity level (MSL): 1 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 SOD-123 MECHANICAL DATA - Case: Bend lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260C/10s - Polarity: Indicated by cathode band - Weight: 0.01 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL BAT42W BAT43W UNIT Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 30 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 21 V R(RMS) Forward Continue Current (Note 1) I 200 mA FM Repetitive Peak Forward Current I 500 t 1.0s mA FM Non-Repetitive Peak Forward Surge Current t 1.0 ms I 4 A FSM Repetitive Peak Forward Surge Current I 500 mA FRM Power Dissipation (Note 1) P 200 mW d I =200mA 1.0 F I =2mA - 0.33 F Maximum Forward Voltage I =10mA V 0.40 - V F F I =15mA - 0.45 F I =50mA 0.65 - F Peak Reverse Current V =25V & T =25C I 500 nA R J R V =1V, f=1.0MHz Junction Capacitance C 10 pF R J Reverse Recovery Time (Note 2) t 5 ns rr Thermal Resistance Junction to Ambient (Note 1) R 625 C JA Operating Temperature Range T -55 to +125 C J Storage Temperature Range T -55 to +125 C STG Notes: 1. Valid provided that terminals are kept at ambient temperature. Notes: 2. Test conditions : I =10mA, I =10mA, R =100, I =1mA F R L RR Version: G1605BAT42W/BAT43W Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig.1 Typical Forward Characteristics Fig. 2 Typical Forward Characteristics 1000 100 100 10 BAT43W 10 1 BAT42W 0.1 0.01 1 10 100 1000 100 1000 Instantaneous Forward Voltage (mV) Forward Voltage (mV) Fig. 3 Typical Reverse Characteristics Fig. 4 Typical Reverse Characteristics 120 15.5 100 Fig. 4 14.5 line 1 80 BAT43W 13.5 60 line 2 12.5 BAT42W 40 11.5 20 10.5 9.5 0 10 100 1000 2 8 14 20 26 32 Reverse Voltage (mV) Reverse Voltage (V) Version: G1605 Instantaneous Forward Current (A) Reverse Leakage Current (nA) Forward Current (mA) Reverse Current (nA)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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