Product Information

BAS70-06

Name: BAS70-06
Brand: Taiwan Semiconductor
SKU: BAS7006_TaiwanSemiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

BAS70-06 electronic component of Taiwan Semiconductor

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Datasheet

Diodes - General Purpose, Power, Switching 70 Volt 70mA Dual

Manufacturer: Taiwan Semiconductor

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.0467 ea
Line Total: USD 140.1

0 - Global Stock

MOQ: 3000 Multiples: 3000
Pack Size: 3000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Tue. 04 Jun MOQ : 3000 Multiples : 3000 BAS70-06 Taiwan Semiconductor	3000 : USD 0.0426 9000 : USD 0.0333 45000 : USD 0.0299 99000 : USD 0.0287

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Additional Infomation About Product

BAS70 / -04 / -05 / -06 Taiwan Semiconductor 70mA, 70V SMD Schottky Barrier Diode FEATURES KEY PARAMETERS Low turn-on voltage PARAMETER VALUE UNIT Fast switching I 70 mA F Moisture sensitivity level: level 1, per J-STD-020 V 70 V RRM RoHS Compliant I 0.1 A Halogen-free according to IEC 61249-2-21 FSM V at I =15mA 1 V F F T Max. 125 C J APPLICATIONS Package SOT-23 Adapters For switching power supply Low stored charge Inverter MECHANICAL DATA Case: SOT-23 Molding compound: UL flammability classification rating 94V-0 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BAS70 73 BAS70-04 74 Marking code on the device BAS70-05 75 BAS70-06 76 Repetitive peak reverse voltage V 70 V RRM Working peak reverse voltage V RWM 70 V DC blocking voltage V 70 V R RMS reverse voltage V R(RMS) 49 V Forward current I 70 mA F Non-repetitive peak forward surge current t = 1s I 100 mA FSM Power dissipation P 200 D mW Junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 STG C 1 Version: F2001 BAS70 / -04 / -05 / -06 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 625 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1mA, T = 25C 0.41 F J (1) - Forward voltage per diode V V F I = 15mA, T = 25C 1.00 F J (2) - 100 Reverse current per diode V = 50V T = 25C I nA R J R I =10A 70 - Reverse Breakdown Voltage V V R (BR) - 2 f = 1 MHz, V =0V Junction capacitance R C pF J I =I =10mA, R =100, F R L - 5 Reverse Recovery Time t ns rr I =1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note 1) BAS7xxxx RF SOT-23 3K / 7 Reel BAS7xxxx RFG SOT-23 3K / 7 Reel BAS7xxxx-B0 RF SOT-23 3K / 7 Reel BAS7xxxx-B0 RFG SOT-23 3K / 7 Reel BAS7xxxx-D0 RF SOT-23 3K / 7 Reel BAS7xxxx-D0 RFG SOT-23 3K / 7 Reel Note: 1. xxx defines part no. from0 to0-06 2 Version: F2001

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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