Product Information

BA157 R0

BA157 R0 electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 1A,400V,150NS,F. RECOV. PLASTICRECTIFIER

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0079 ea
Line Total: USD 79

0 - Global Stock
MOQ: 10000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 10000
Multiples : 5000

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BA157 R0
Taiwan Semiconductor

10000 : USD 0.0079

     
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Product Category
Configuration
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Operating Temperature Classification
Operating Temp Range
Peak Rep Rev Volt
Rev Curr
Avg Forward Curr Max
Package Type
Rev Recov Time
Forward Voltage
Rad Hardened
Mounting
Pin Count
Peak Non-Repetitive Surge Current
Rectifier Type
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BA157 - BA159 1.0AMP Fast Recovery Rectifiers DO-41 RoRoHHSS Pb COCOMMPPLIALIANCENCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix on packing code & prefix on datecode Mechanical Data Cases: DO-41 Molded plastic Epoxy: UL 94V-0 rate flame retardant Dimensions in inches and (millimeters) Lead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Marking Diagram Polarity: Color band denotes cathode end BA15X = Specific Device Code G = Green Compound High temperature soldering guaranteed: 260 /10s /.375", (9.5mm) lead lengths at 5 lbs, Y = Year (2.3kg) tension WW = Work Week Weight: 0.34 grams Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% BA157 BA158 BA159 Type Number Symbol Units Maximum Recurrent Peak Reverse Voltage V 400 600 1000 V RRM Maximum RMS Voltage V 280 420 700 V RMS Maximum DC Blocking Voltage V 400 600 1000 V DC Maximum Average Forward Rectified Current I 1 A F(AV) .375 (9.5mm) Lead Length @ T =45 A Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.2 V F @ 1 A Maximum DC Reverse Current at @ T =25 5 uA A I R Rated DC Blocking Voltage @ T =125 A 150 uA Maximum Reverse Recovery Time (Note 2) 150 250 Trr nS Typical Junction Capacitance (Note 3) 10 Cj pF O Typical Thermal Resistance (Note 4) R 65 jA C/W O Operating Temperature Range T - 65 to + 150 J C O Storage Temperature Range T - 65 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note 4: Mount on Cu-Pad Size 5mm x 5mm on PCB Version:C10RATINGS AND CHARACTERISTIC CURVES (BA157 THRU BA159) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING PER LEG CURVE 1000 1.25 1 100 0.75 TA=125 0.5 RESISTIVE OR 10 TA=75 INDUCTIVE LOAD 0.25 0 0 25 50 75 100 125 150 175 1 o LEAD TEMPERATURE ( C) TA=25 0.1 0 20 40 60 80 100 120 140 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD PERCENT OF RATED PEAK REVERSE VOLTAGE (%) SURGE CURRENT 70 60 8.3mS Single Half Sine Wave 50 JEDEC Method 40 FIG. 5- TYPICAL FORWARD CHARACTERISRICS 30 100 20 TA=25 10 Pulse Width=300us 1% Duty Cycle 0 1 10 100 10 NUMBER OF CYCLES AT 60 Hz 1 FIG. 4- TYPICAL JUNCTION CAPACITANCE 100 0.1 TA=25 0.01 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) 1 1 10 100 REVERSE VOLTAGE (V) Version:C10 AVERAGE FORWARD PEAK FORWARD SURGE A JUNCTION CAPACITANCE (pF) CURRENT (A) CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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