Product Information

1N4007 A0

1N4007 A0 electronic component of Taiwan Semiconductor

Datasheet
Diode 1KV 1A 2-Pin DO-41 Ammo

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.0197 ea
Line Total: USD 118.2

0 - Global Stock
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 6000
Multiples : 3000

Stock Image

1N4007 A0
Taiwan Semiconductor

6000 : USD 0.0197
9000 : USD 0.0176
18000 : USD 0.0168
27000 : USD 0.0162

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Peak Non-Repetitive Surge Current Max
Peak Rep Rev Volt
Rev Curr
Avg Forward Curr Max
Peak Non-Repetitive Surge Current
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1N4001 thru 1N4007 Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-204AL (DO-41) DO-204AL (DO-41) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Weight: 0.33g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A 1N 1N 1N 1N 1N 1N 1N PARAMETER SYMBOL UNIT 4001 4002 4003 4004 4005 4006 4007 Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load 2 2 Rating for fusing (t<8.3ms) 3.7 ItA s Maximum instantaneous forward voltage (Note 1) V 1.0 V F 1 A 5 Maximum reverse current Rated VR T =25 J I A R T =125 50 J 10 Typical junction capacitance (Note 2) Cj pF R 6 jC O Typical Thermal Resistance R 15 jL C/W R 65 jA O Operating junction temperature range T - 55 to +150 C J O T Storage temperature range - 55 to +150 STG C Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS D1405004 Version: H141N4001 thru 1N4007 Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE PACKING CODE A0 DO-41 3,000 / Ammo box (52mm taping) R0 DO-41 5,000 / 13 Paper reel 1N400x Suffix (Note 1) R1 DO-41 5,000 / 13 Paper reel (Reverse) B0 DO-41 1,000 / Bulk packing Note 1:x defines voltage from 50V (1N4001) to 1000V (1N4007) EXAMPLE GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION CODE 1N4007 A0 A0 1N4007 1N4007 A0G 1N4007 A0 G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG.1 MAXMUM FORWARD CURRENT DERATING FIG. 2 MAXIMUM NON-REPETITIVE FORWARD CURVE SURGE CURRENT 1. 5 50 8.3ms Single Half Wave JEDEC Method 40 1 30 20 0. 5 10 0 0 0 25 50 75 100 125 150 1 10 100 o AMBIENT TEMPERATURE( C) NUMBER OF CYCLES AT 60 Hz FIG. 3 TYPICAL FORWARD CHARACTERISTICS FIG. 4 TYPICAL REVERSE CHARACTERISTICS 10 10 TJ=125 1 1 0. 1 TJ=25 0. 1 0. 01 0. 6 0. 7 0. 8 0. 9 1 1. 1 1. 2 1. 3 1. 4 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1405004 Version: H14 AVERAGE FORWARD CURRENT(A) INSTANTANEOUS FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT(A) REVERSE LREAKAGE CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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