Product Information

1.5KE51CA R0G

1.5KE51CA R0G electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 1.5KW, 51V, 5% Bidirectional, TVS

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6532 ea
Line Total: USD 0.65

1303 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1302 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

1.5KE51CA R0G
Taiwan Semiconductor

1 : USD 0.6532
10 : USD 0.5627
100 : USD 0.3985
500 : USD 0.3429
1250 : USD 0.2994
2500 : USD 0.2705
5000 : USD 0.2645
10000 : USD 0.2548
25000 : USD 0.2524

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Termination Style
Package / Case
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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1.5KE SERIES Taiwan Semiconductor CREAT BY ART 1500W, 6.8V - 440V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 1500W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to V for unidirectional BR and 5.0ns for bidirectional - Typical I less than 1A above 10V R - UL recognized file E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 DO-201 MECHANICAL DATA Case: DO-201 Molding compound: UL flammability classification rating 94V-0 Part No. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Weight: 0.94g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Peak power dissipation at T =25C, Tp=1ms (Note 1) P 1500 W A PK Steady state power dissipation at T =75C L P 5 W D lead lengths .375 , 9.5mm (Note 2) Peak forward surge current, 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load Maximum Instantaneous Forward Voltage at 50 A for V 3.5 / 5.0 V F Unidirectional Only (Note 3) Operating junction temperature range T - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Non-repetitive current pulse per fig. 3 and derated above T =25C per fig. 2 A Note 2: Mounted on copper pad area of 0.6 x 0.6 (16mm x 16mm) Note 3: V =3.5V for devices of V 200V and V =5.0V max. for devices V >200V F BR F BR Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types 1.5KE6.8 - types 1.5KE440 2. Electrical characteristics apply in both directions ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE PACKAGE PACKING PART NO. SUFFIX SUFFIX A0 DO-201 500 / Ammo box 1.5KExxxx H R0 G DO-201 1,250 / 13 Paper reel (Note 1) B0 DO-201 500 / Bulk packing Note 1:xxx defines voltage from 6.8V (1.5KE6.8) to 440V (1.5KE440) EXAMPLE EXAMPLE PART NO. PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified 1.5KE100AHR0G 1.5KE100A H R0 G Green compound Version: N16021.5KE SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 Non-repetitive pulse waveform With heat sink shown in fig.3 100 10 75 50 1 Without heat sink 25 0 0. 1 0 25 50 75 100 125 150 175 200 0. 1 1 10 100 1000 10000 tp, PULSE WIDTH, (s) T , AMBIENT TEMPERATURE ( C) A FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY Pulse width(td) is defined 200 140 as the point where the peak tr=10s 180 current decays to 50% of I PPM 8.3ms single half sine wave 120 Peak value 160 I PPM 100 140 Half value-I /2 PPM 120 80 10/1000s, waveform as defined by R.E.A. 100 60 80 40 60 40 20 20 td 0 0 0 0.511.522.533.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 10000 UNIDIRECTIONAL BIDIRECTIONA VR=0 1000 100 V -rated R stand-off f=1.0MHz voltage Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Version: N1602 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, kW CJ, JUNCTION CAPACITANCE (pF) A PPM PEAK PULSE POWER(P ) OR CURRENT (I ) A IFSM, PEAK FORWARD SURGE CURRENT (A) PP PP DERATING IN PERCENTAGE (%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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