Product Information

Z00607MN 5AA4

Z00607MN 5AA4 electronic component of STMicroelectronics

Datasheet
STMicroelectronics Triacs

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4571 ea
Line Total: USD 2.29

950 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
940 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 5
Multiples : 5

Stock Image

Z00607MN 5AA4
STMicroelectronics

5 : USD 0.4716
50 : USD 0.3839
150 : USD 0.3464
1000 : USD 0.2996
2000 : USD 0.2788
5000 : USD 0.2662

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Brand
Factory Pack Quantity :
Off-State Leakage Current Vdrm Idrm
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Z00607 Standard 0.8 A Triacs Datasheet - production data Description A2 The Z00607 is suitable for low power AC switching applications. Typical applications G include home appliances (electrovalve, pump, A1 door lock, small lamp control), fan speed controllers,... A2 Thanks to the low gate triggering current these triacs can be driven directly by microcontrollers. G A2 A2 A1 G A1 SOT-223 TO-92 Z00607MN Z00607MA Features On-state rms current = 0.8 A Repetitive peak off-state voltage = 600 V Gate triggering current = 5 mA June 2014 DocID6629 Rev 9 1/8 This is information on a product in full production. www.st.comCharacteristics Z00607 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit SOT-223 T = 85 C tab On-state rms current I 0.8 A T(RMS) (full sine wave) TO-92 T = 50 C L F = 50 Hz t = 20 ms 9 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 9.5 ItI t Value for fusing t = 10 ms 0.45 A s p Critical rate of rise of on-state current I G dI/dt F = 120 Hz T = 110 C 20 A/s j = 2 x I , t 100 ns GT r I Peak gate current t = 20 s T = 110 C 1 A GM p j P Average gate power dissipation T = 110 C 0.1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 110 j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test Conditions Quadrant Value Unit I - II - III 5 (1) I MAX mA GT V = 12 V, R = 30 IV 7 D L V ALL MAX 1.3 V GT V V = V R = 3.3 k, = 110 ALL MIN 0.2 V GD D DRM, L j (2) I I = 200 mA MX. 5 mA H T I - III - IV 10 I I = 1.2 I MAX mA L G GT II 20 (2) dV/dt V = 67% V , gate open = 110 MIN 10 V/s D DRM j (2) (dV/dt)c (/) = 0.35 /, = 110 MIN 1.5 V/s j 1. minimum I is guaranteed at 5% of I max. GT GT 2. for both polarities of A2 referenced to A1. Table 3. Static characteristics Symbol Test Conditions Value Unit (1) V I = 1.1 A t = 380 s T = 25 C MAX. 1.5 V TM TM p j (1) V Threshold voltage T = 110 C MAX. 0.95 V to j (1) R Dynamic resistance T = 110 C MAX. 420 m d j T = 25 C 5A I j DRM V = V = 600 V MAX. DRM RRM I T = 110 C 0.1 mA RRM j 1. for both polarities of A2 referenced to A1. 2/8 DocID6629 Rev 9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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