VNLD5160-E OMNIFET III fully protected low-side driver for automotive applications Datasheet - production data Description The VNLD5160-E is a monolithic device made using STMicroelectronics VIPower technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from SO-8 overtemperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration overload, the Features device limits the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the Type V R I clamp DS(on) D device to recover normal operation as soon as a VNLD5160-E 41 V m160 3.5 A fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-off. AEC-Q100 qualified Drain current: 3.5 A ESD protection Overvoltage clamp Thermal shutdown Current and power limitation Very low standby current Very low electromagnetic susceptibility Compliant with European directive 2002/95/EC Specially intended for R10W or 2xR5W automotive signal lamps Table 1. Devices summary Order codes Package Tube Tape and reel SO-8 VNLD5160-E VNLD5160TR-E October 2017 DocID027681 Rev 3 1/20 This is information on a product in full production. www.st.comContents VNLD5160-E Contents 1 Block diagrams and pins configurations 5 2 Electrical specifications 7 2.1 Absolute maximum ratings . 7 2.2 Thermal data . 7 2.3 Electrical characteristics . 8 3 Application information . 11 3.1 MCU I/O protection 11 4 Package and PC board thermal data . 13 4.1 SO-8 thermal data 13 5 Package and packing information . 16 5.1 SO-8 package information 16 5.2 SO-8 packing information . 18 6 Revision history . 19 2/20 DocID027681 Rev 3