Product Information

TYN816RG

TYN816RG electronic component of STMicroelectronics

Datasheet
Thyristor; 800V; 10A; 16A; 25mA; Package: tube; THT; TO220AB

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

16: USD 0.7174 ea
Line Total: USD 11.48

1348 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 16  Multiples: 1
Pack Size: 1
Availability Price Quantity
239 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

TYN816RG
STMicroelectronics

1 : USD 1.534
5 : USD 1.326
18 : USD 0.923
49 : USD 0.871

1348 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 16
Multiples : 1

Stock Image

TYN816RG
STMicroelectronics

16 : USD 0.7174
100 : USD 0.7043
500 : USD 0.6705
1000 : USD 0.6403
2000 : USD 0.6275

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
LoadingGif

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TN1625 TYN616, TYN816 16 A standard SCRs Features A I =16 A T(RMS) G V /V = 600 to 1000 V DRM RRM K I = 25 mA GT Description A A The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a K A K superior performance in surge current A G G capabilities. 2 D PAK TO-220AB (TN1625-x00G) (TYNx16RG) Table 1. Device summary TN1625-600G TN1625-1000G Parameter Unit TYN616RG TYN816RG V /V 600 800 1000 V DRM RRM Sensitivity 25 25 25 mA November 2007 Rev 6 1/9 www.st.com 9Characteristics TN1625, TYN616, TYN816 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 Conduction angle) T = 110 C 16 A T(RMS) c I Average on-state current (180 Conduction angle) T = 110 C 10 A T(AV) c t = 8.3 ms 200 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 190 p 2 2 2 ItI t Value for fusing t = 10 ms T = 25 C 180 A S p j Critical rate of rise of on-state current dI/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V RGM Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test Conditions Value Unit MIN. 2 I mA GT V = 12 V R = 33 MAX. 25 D L V MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM L j I I = 500 mA Gate open MAX. 40 mA H T I I = 1.2 x I MAX. 60 mA L G GT dV/dt V = 67 % V Gate open T = 125 C MIN. 500 V/s D DRM j V I = 32 A t = 380 s T = 25 C MAX. 1.6 V TM TM p j V Threshold voltage T = 125 C MAX. 0.77 V t0 j R Dynamic resistance T = 125 C MAX. 23 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I T = 125 C 2 mA RRM j Table 4. Thermal resistance Symbol Parameter Value Unit R Junction to case (DC) 1.1 C/W th(j-c) 2 2 S = 01 cm D PAK 45 R Junction to ambient (DC) C/W th(j-a) TO-220AB 60 S = copper surface under tab 2/9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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