Product Information

TS820-600B

TS820-600B electronic component of STMicroelectronics

Datasheet
STMicroelectronics SCRs 8.0 Amp 600 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6687 ea
Line Total: USD 0.67

669 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
669 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

TS820-600B
STMicroelectronics

1 : USD 0.6687
10 : USD 0.5559
30 : USD 0.4995
100 : USD 0.4451
500 : USD 0.4109
1000 : USD 0.3947

288 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

TS820-600B
STMicroelectronics

1 : USD 0.923
5 : USD 0.624
25 : USD 0.559
34 : USD 0.4823
94 : USD 0.455

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
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TN805, TN815 TS820, TYN608 Datasheet Sensitive and standard 8 A SCRs Features A K On-state rms current, I 8 A T(RMS) Repetitive peak off-state voltage, V /V 600 and 800 V DRM RRM G A Triggering gate current, I 0.2 to 15 mA GT Description G G TO-220AB TO-220FPAB A A K Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the K 8 A SCR series is suitable to fit all modes of control found in applications such as A A overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. K TO-220AB A K Available in through-hole or surface-mount packages, they provide an optimized IPAK A G G performance in a limited space. A A K Product summary G DPAK Voltage (x00) Order code Sensitivity V /V DRM RRM Package I GT 600 V 800 V TS820-600B X 0.2 mA DPAK TS820-600H X 0.2 mA IPAK Product status link TS820-600T X 0.2 mA TO-220AB TN805, TN815, TS820, TYN608 TS820-600FP X 0.2 mA TO-220FPAB TN805-600B X 5 mA DPAK TN815-x00B X X 15 mA DPAK TN815-800H X 15 mA IPAK TYN608RG X 15 mA TO-220AB DS2118 - Rev 9 - November 2021 www.st.com For further information contact your local STMicroelectronics sales office.TN805, TN815, TS820, TYN608 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Value TN805 Symbol Parameters Unit TN815 TYN608 TS820 T = 110 C RMS on-state current On-state rms current C I 8 A T(RMS) (180 conduction angle) TO-220FPAB, T = 91 C C T = 110 C C I Average on-state current (180 conduction angle) 5 A T(AV) TO-220FPAB, T = 91 C C t = 8.3 ms 73 100 p Non repetitive surge peak on-state I T = 25 C A TSM j current t = 10 ms 70 95 p 2 2 2 t = 10 ms T = 25 C I t I t value for fusing 24.5 45 A s p j Critical rate of rise of on-state current dl/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r I t = 20 s T = 125 C Peak gate current 4 A GM p j P T = 125 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j V Maximum peak reverse gate voltage (for TN8x5 and TYN608 only) 5 V RGM Table 2. Sensitive electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Parameter TS820 Unit I Max. 200 A GT V = 12 V, R = 140 D L V Max. 0.8 V GT V I = 10 A Min. 8 V RG RG V V = V , R = 3.3 k, R = 220 T = 125 C Min. 0.1 V GD D DRM L GK j I I = 50 mA, R = 1 k Max. 5 mA H T GK I I = 1mA, R = 1 k Max. 6 mA L G GK dV/dt V = 65% V , R = 220 T = 125 C Min. 5 V/s D DRM GK j V I = 16 A, t = 380 s T = 25 C Max. 1.6 V TM TM p j V T = 125 C t0 Threshold voltage j Max. 0.85 V R T = 125 C Dynamic resistance Max. 46 m d j T = 25 C I 5 A DRM j V = V , R = 220 Max. DRM RRM GK I T = 125 C RRM 1 mA j DS2118 - Rev 9 page 2/20

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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