Product Information

TN1205T-600B-TR

TN1205T-600B-TR electronic component of STMicroelectronics

Datasheet
Thyristor; 600V; 8A; 12A; 5mA; Package: Reel, tape; SMD; DPAK

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

19: USD 0.5135 ea
Line Total: USD 9.76

2211 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 19  Multiples: 1
Pack Size: 1
Availability Price Quantity
2211 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

TN1205T-600B-TR
STMicroelectronics

1 : USD 0.5186
10 : USD 0.5135
25 : USD 0.5068
100 : USD 0.406
250 : USD 0.3978
500 : USD 0.3978
1000 : USD 0.3978

1548 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

TN1205T-600B-TR
STMicroelectronics

1 : USD 0.923
5 : USD 0.819
25 : USD 0.728
26 : USD 0.6331
71 : USD 0.598

2211 - Warehouse 3


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 19
Multiples : 1

Stock Image

TN1205T-600B-TR
STMicroelectronics

19 : USD 0.5135
25 : USD 0.5068
100 : USD 0.406
250 : USD 0.3978

1892 - Warehouse 4


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 133
Multiples : 1

Stock Image

TN1205T-600B-TR
STMicroelectronics

133 : USD 0.6888
250 : USD 0.675

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Hts Code
LoadingGif

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TN1205T-600 12 A SCR Features High current density per square mm Applications Overvoltage crowbar protection A Motor control circuits in power tools and kitchen aids K Inrush current limiting circuits A G Description DPAK This device is mounted in DPAK and intended for TN1205T-600B use in applications such as voltage regulators circuits for motorbikes, overvoltage crowbar protection, motor control circuits in power tools and capacitive discharge ignition. Table 1. Device summary I 12 A T(rms) V /V 600 V DRM RRM I 2 to 5 mA GT October 2009 Doc ID 16339 Rev 1 1/8 www.st.com 8Characteristics TN1205T-600 1 Characteristics (1) Table 2. Absolute ratings Symbol Parameter Value Unit I On-state rms current (180 C conduction angle) T = 103 C 12 A T(RMS) c I Average on-state current(180 C conduction angle) T = 103 C 8 A T(AV) c t = 8.3 ms 120 p I Non repetitive surge peak on-state current A TSM t = 10 ms 115 p 2 2 2 ITI T value for fusing t = 10 ms 66 A s p Critical rate of rise of on-state current di/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , tr 100 ns G GT I Peak gate current t = 20 s T = 125 C 4 A GM p c P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to + 150 stg C T Operating junction temperature range -40 to + 125 j 1. T = 25 C, unless otherwise specified j (1) Table 3. Electrical characteristics Symbol Test conditions Min. Typ. Max. Unit I V = 12 V, R = 33 25mA GT D L V V = 12 V, R = 33 1.3 V GT D L V V = V R = 3.3 k T = 125 C 0.2 V GD D DRM, L j I I = 500 mA gate open 15 mA H T I I = 1.2 I 30 mA L G GT dV/dt V = 67% V gate open T = 125 C 100 V/s D DRM j Gate controlled turn on time t I = 40 A, V = V , I = 100 mA 1.2 s GT TM D DRM(MAX) GT dI /dt = 5 A/s, R = 68 G G Circuit commutated turn off time t V = 67% V , T = 125 C, I = 20 A, V = 25 V 55 s q D DRM(MAX) j TM R dI /dt = 30 A/S, dV /dt = 50 V/s, R = 100 T D GK V I = 24 A, T = 380 s 1.6 V TM TM p V Threshold voltage T = 125 C 0.85 V T0 j R Dynamyc restistance T = 125 C 30 m d j T = 25 C 5 A I j DRM V = V DRM RRM I RRM T = 125 C 2 mA j 1. T = 25 C, unless otherwise specified j 2/8 Doc ID 16339 Rev 1

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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