Product Information

T835T-8FP

T835T-8FP electronic component of STMicroelectronics

Datasheet
TRIAC Alternistor - Snubberless 800 V 8 A Through Hole TO-220FPAB

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

23: USD 0.3202 ea
Line Total: USD 7.36

154 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 23  Multiples: 1
Pack Size: 1
Availability Price Quantity
154 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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T835T-8FP
STMicroelectronics

1 : USD 0.3202

27 - WHS 2


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

T835T-8FP
STMicroelectronics

1 : USD 0.9648
10 : USD 0.7917
50 : USD 0.7031
100 : USD 0.6184
500 : USD 0.5661
1000 : USD 0.5398

154 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 23
Multiples : 1

Stock Image

T835T-8FP
STMicroelectronics

23 : USD 0.3202

48 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 50
Multiples : 50

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T835T-8FP
STMicroelectronics

50 : USD 0.5541
100 : USD 0.522
500 : USD 0.5167
1000 : USD 0.5082
2000 : USD 0.4981

2283 - WHS 5


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 46
Multiples : 1

Stock Image

T835T-8FP
STMicroelectronics

46 : USD 0.8133
50 : USD 0.7985
100 : USD 0.7719
200 : USD 0.7579
500 : USD 0.7485
1000 : USD 0.7428

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
LoadingGif

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T835T-8FP 8 A Snubberless Triac Datasheet production data Features A2 Medium current Triac High static and dynamic commutation G A1 Three quadrants ECOPACK 2 compliant component Complies with UL standards (File ref: E81734) Applications General purpose AC line load switching G A2 Motor control circuits A1 Small home appliances Lighting Inrush current limiting circuits TO-220FPAB (T835T-8FP) Overvoltage crowbar protection Description Table 1. Device summary Available in through-hole full pack package, the Symbol Value Unit T835T-8FP Triac can be used for the on/off or phase angle control function in general purpose I 8A T(rms) AC switching where high commutation capability V , V 800 V DRM RRM is required. This device can be used without a V , V 900 V snubber circuit when the limits defined in this DSM RSM datasheet are respected I 35 mA GT Provides UL certified insulation rated at 2 kV. TM: Snubberless is a trademark of STMicroelectronics January 2015 DocID024248 Rev 2 1/9 This is information on a product in full production. www.st.com 9Characteristics T835T-8FP 1 Characteristics Table 2. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit I On-state rms current (full sine wave) T = 113C 8 A T(rms) c F = 50 Hz t = 20 ms 60 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 63 ItI t value for fusing, T initial = 25 C t = 10 ms 24 A s j p T = 150 C 600 j V , DRM Repetitive surge peak off-state voltage V V RRM T = 125 C 800 j V , DSM Non repetitive surge peak off-state voltage t = 10 ms 900 V p V RSM Critical rate of rise of on-state dI/dt F = 100 Hz 100 A/s current I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 150 j T Maximum lead temperature for soldering during 10 s 260 C L V Insulation rms voltage, 1 minute 2 kV ins Table 3. Electrical characteristics (T = 25 C, unless otherwise stated) j Symbol Test conditions Quadrant Value Unit Min. 1.75 (1) I V = 12 V, R = 30 I - II - III mA GT D L Max. 35 V = 12 V, R = 30 V I - II - III Max. 1.3 V D L GT V V = V , R = 3.3 k, T = 150 C I - II - III Min. 0.2 V GD D DRM L j (1) I I = 500 mA Max. 40 mA H T I - III Max. 60 mA I I = 1.2 I L G GT II Max. 65 mA T = 125 C V = 536 V, gate open 2000 V/s j D (1) dV/dt Min. T = 150 C V = 402 V, gate open 1000 V/s j D T = 125 C 8 j (1) (dI/dt)c Without snubber (dV/dt)c 20 V/s) Min. A/ms T = 150 C 4 j 1. For both polarities of A2 referenced to A1 2/9 DocID024248 Rev 2

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
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SG3
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STMICRELECTRONICS
STN

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