Product Information

T830-800W

T830-800W electronic component of STMicroelectronics

Datasheet
Triacs 8.0 Amp 800 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

15: USD 0.8522 ea
Line Total: USD 12.78

0 - Global Stock
MOQ: 15  Multiples: 15
Pack Size: 15
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

T830-800W
STMicroelectronics

1 : USD 2.4592

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 15
Multiples : 15

Stock Image

T830-800W
STMicroelectronics

15 : USD 0.8522

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Package Case
Brand
Factory Pack Quantity :
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T820W T830W 8A SNUBBERLESS TRIAC A2 MAIN FEATURES Symbol Value Unit I 8A G T(RMS) V /V 600 and 800 V A1 DRM RRM I 20 to 30 mA GT DESCRIPTION G A2 Based on ST Snubberless technology providing high A1 commutation performances, the T820-600W/800W are specially recommended for use on inductive loads, thanks to their high commutation perfor- ISOWATT220AB mances, such as washing-machines drum motor (Plastic) controllers. They comply with UL standards (ref. E81734). ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit I RMS on-state current (Full sine wave) Tc= 100C 8 A T(RMS) I Non repetitive surge peak on-state F = 50Hz t = 20ms 100 A TSM current (Full cycle, T initial = 25C ) j F = 60Hz t = 16.7ms 105 2 2 2 ItI t Value for fusing tp = 10 ms 55 A s dI/dt Critical rate of rise of on-state current F = 120 Hz Tj = 125C 50 A/s I =2xI ,tr 100ns G GT V /V Non repetitive surge peak off-state tp = 10ms Tj = 25C V /V V DSM RSM DRM RRM voltage + 100 I Peak gate current tp = 20s Tj = 125C 4 A GM P Average gate power dissipation Tj = 125C 1 W G(AV) T Storage junction temperature range -40to+150 C stg T Operating junction temperature range -40to+125 j March 2004 - Ed: 2 1/5T820W / T830W ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Test Conditions Quadrant T820 T830 Unit (1) I V =12V R =33 I-II-III MAX. 20 30 mA GT D L V I-II-III MAX. 1.3 V GT V V =V R =3.3k Tj = 125C I-II-III MIN. 0.2 V GD D DRM L (2) I I = 250mA MAX. 35 50 mA H T I I = 1.2I I - III MAX. 50 70 mA L G GT II MAX. 60 80 mA (2) dV/dt V =67% V Gate open Tj = 125C MIN. 300 500 V/s D DRM (2) (dI/dt)c Without snubber Tj = 125C MIN. 4.5 5.5 A/ms STATIC CHARACTERISTICS Symbol Test Conditions Value Unit (2) V I = 11A tp = 380s Tj = 25C MAX. 1.4 V TM TM (2) V Threshold voltage Tj = 125C MAX. 0.85 V TO (2) R Dynamic resistance Tj = 125C MAX. 40 m d I V =V Tj = 25C MAX 5 A DRM DRM RRM I Tj = 125C 1 mA RRM Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 60 C/W Rth(j-c) Junction to case (AC) 3.1 C/W PRODUCT SELECTOR Part Number Voltage Sensitivity Type Package T820-600W 600V 20 mA Snubberless ISOWATT220AB T820-800W 800V 20 mA Snubberless ISOWATT220AB T830-600W 600V 30 mA Snubberless ISOWATT220AB T830-800W 800V 30 mA Snubberless ISOWATT220AB 2/5

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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