Product Information

T1235T-8R

T1235T-8R electronic component of STMicroelectronics

Datasheet
Triacs 12 A Snuberless Triac

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

14: USD 0.4708 ea
Line Total: USD 6.59

0 - Global Stock
MOQ: 14  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2000
Multiples : 1

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T1235T-8R
STMicroelectronics

2000 : USD 1.2354
2500 : USD 1.2246
3000 : USD 1.2138
4000 : USD 1.2005
5000 : USD 1.1898
6000 : USD 1.1789
10000 : USD 1.167
20000 : USD 1.1554
50000 : USD 1.1439

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2000
Multiples : 2000

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T1235T-8R
STMicroelectronics

2000 : USD 0.4972

0 - WHS 3


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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T1235T-8R
STMicroelectronics

1 : USD 3.314
10 : USD 1.2514
25 : USD 1.1392

0 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 14
Multiples : 1

Stock Image

T1235T-8R
STMicroelectronics

14 : USD 0.4708

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
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Tradename
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T1235T-8R 12 A Snubberless Triac Datasheet - production data A2 Description Housed in an IPAK package this device is dedicated to low profile compact applications. G Its fully rated 150 C junction temperature allows A1 high AC commutation capability for on/off or A2 phase control applications without snubber aid circuit. Table 1: Device summary Symbol Value Unit G A2 VDRM/VRRM 800 V A1 IPAK I 35 mA GT Tj 150 C Features 12 A medium current Triac Three triggering quadrants device Very high noise immunity and dynamic commutation ECOPACK 2 compliant component Applications General purpose AC line load control Motor control circuits Home, kitchen and tools appliances Lighting Inrush current limiting circuits November 2017 DocID031120 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics T1235T-8R 1 Characteristics Table 2: Absolute ratings (limiting values), Tj = 25 C, unless otherwise specified Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TC = 128 C 12 A t = 20 ms 90 p Non repetitive surge peak on-state current ITSM A (full cycle, T initial = 25 C) j tp = 16.7 ms 95 It It value for fusing t = 10 ms 66 As p Critical rate of rise of on-state current dl/dt f = 100 Hz 100 A/s IG = 2 x IGT , tr 100 ns T = 125 C 800 j VDRM / VRRM Repetitive peak off-state voltage Tj = 150 C 600 V V / V Non repetitive surge peak off-state voltage t = 10 ms 900 DSM RSM p I Peak forward gate current tp = 20 s T = 150 C 4 A GM j PG(AV) Average gate power dissipation Tj = 150 C 1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +150 C Table 3: Electrical characteristics (Tj = 25 C unless otherwise specified) Symbol Test conditions Quadrant Value Unit (1) IGT Max. 35 mA V = 12 V, R = 33 I - II - III D L V Max. 1 V GT VGD VD = VDRM, RL = 3.3 k, Tj = 150 C I - II - III Min. 0.15 V (1) IH I = 500 mA, gate open Max. 35 mA T I - III 50 I I = 1.2 x I Max. mA L G GT II 80 VD = 536 V, gate open Tj = 125 C 2000 (2) dV/dt Min. V/s V = 402 V, gate open T = 150 C 1000 D j Tj = 125 C 19.5 (2) (dI/dt)c Without snubber Min. A/ms T = 150 C 13 j Notes: (1) minimum I is guaranted at 5% of I max. GT GT (2) for both polarities of A2 referenced to A1. 2/9 DocID031120 Rev 1

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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