Product Information

STW11NK90Z

STW11NK90Z electronic component of STMicroelectronics

Datasheet
MOSFET N Ch 900V Zener SuperMESH 9.2A
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.4446 ea
Line Total: USD 2.44

343 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
343 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STW11NK90Z
STMicroelectronics

1 : USD 2.4446
10 : USD 2.0902
30 : USD 1.8686
100 : USD 1.6412
500 : USD 1.5405
1000 : USD 1.4962

82 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STW11NK90Z
STMicroelectronics

1 : USD 3.653
3 : USD 3.302
7 : USD 2.522
18 : USD 2.392

407 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 5
Multiples : 1

Stock Image

STW11NK90Z
STMicroelectronics

5 : USD 6.203
10 : USD 5.7589
25 : USD 5.487
30 : USD 5.1247
100 : USD 4.776
120 : USD 4.4989
250 : USD 4.226
510 : USD 4.054
600 : USD 3.9729

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

STW11NK90Z N-channel 900V - 0.82 - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type V R I Pw DSS DS(on) D STW11NK90Z 900V <0.98 9.2A 200W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances TO-247 Very good manufacturing repeability Description The SuperMESH series is obtained through an extreme optimization of STs well established Internal schematic diagram strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh products Applications Switching application Order codes Part number Marking Package Packaging STW11NK90Z W11NK90Z TO-247 Tube July 2006 Rev 2 1/12 www.st.com 12Contents STW11NK90Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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