Product Information

STTH812G

STTH812G electronic component of STMicroelectronics

Datasheet
STMicroelectronics Rectifiers Ultrafast Recovery 1200 V Diode

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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STTH812G
STMicroelectronics

1 : USD 5.2089
10 : USD 1.7737
100 : USD 1.3463
500 : USD 1.1647
1000 : USD 0.9541
5000 : USD 0.905
10000 : USD 0.8698
50000 : USD 0.8494
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
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STTH812 Ultrafast recovery - 1200 V diode Main product characteristics A K I 8 A F(AV) V 1200 V RRM T 175 C j A A V (typ) 1.25 V F t (typ) 50 ns K K rr TO-220FPAC TO-220AC STTH812FP STTH812D Features and benefits Ultrafast, soft recovery Very low conduction and switching losses K High frequency and/or high pulsed current operation A High reverse voltage capability A High junction temperature K NC Insulated packages: 2 D PAK TO-220Ins TO-220Ins STTH812G STTH812DI Electrical insulation = 2500 V RMS Capacitance = 7 pF TO-220FPAC Order codes Electrical insulation = 2000 V RMS Capacitance = 12 pF Part Number Marking Description STTH812D STTH812D STTH812G STTH812G The high quality design of this diode has produced a device with low leakage current, STTH812G-TR STTH812G regularly reproducible characteristics and intrinsic STTH812FP STTH812FP ruggedness. These characteristics make it ideal for heavy duty applications that demand long term STTH812DI STTH812DI reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/11 www.st.com 11Characteristics STTH812 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM 2 TO-220AC / D PAK / TO-220FPAC 30 I RMS forward current A F(RMS) TO-220AC Ins 20 2 TO-220AC / D PAK T = 140 C c I Average forward current, = 0.5 TO-220FPAC T = 75 C 8A F(AV) c TO-220AC Ins T = 115 C c I Repetitive peak forward current t = 5 s, F = 5 kHz square 100 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 80 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit 2 TO-220AC / D PAK 1.9 R Junction to case TO-220FPAC 5.4 C/W th(j-c) TO-220AC Ins 3.1 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 8 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 5 50 j T = 25 C 2.2 j (2) V Forward voltage drop T = 125 C I = 8 A 1.30 2.0 V F j F T = 150 C 1.25 1.9 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.5 x I + 0.05 I F(AV) F (RMS) 2/11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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