Product Information

STTH6004W

STTH6004W electronic component of STMicroelectronics

Datasheet
Rectifiers Ultrafast high voltage rectifier

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 3.038 ea
Line Total: USD 9.11

3288 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
291 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 30
Multiples : 30

Stock Image

STTH6004W
STMicroelectronics

30 : USD 2.704
90 : USD 2.704
150 : USD 2.704
600 : USD 2.704
900 : USD 2.704

3288 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3
Multiples : 1

Stock Image

STTH6004W
STMicroelectronics

3 : USD 3.038
10 : USD 2.727
100 : USD 2.4848
250 : USD 2.4607
600 : USD 2.4114

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Series
Packaging
Product
Brand
Operating Temperature Range
Factory Pack Quantity :
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STTH6004W Ultrafast high voltage rectifier Table 1: Main product characteristics I 60 A F(AV) V 400 V RRM T (max) 175 C j V (typ) 0.83 V F A (max) K t 50 ns rr DO-247 STTH6004W Features and benefits Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses Description The STTH6004W uses ST 400V technology and is specially suited for use in switching power supplies, welding equipment and industrial applications, as an output rectification diode. Table 2: Order codes Part number Marking STTH6004W STTH6004W Table 3: Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM I RMS forward current 90 A F(RMS) I Average forward current T = 125 C = 0.5 60 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 600 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j October 2005 REV. 1 1/6STTH6004W Table 4: Thermal Resistance Symbol Parameter Value (max). Unit R Junction to case 0.70 C/W th(j-c) Table 5: Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I * Reverse leakage current T = 25 C V = V 50 A R j R RRM T = 150 C 100 1000 j V ** Forward voltage drop T = 25 C I = 60 A 1.2 V F j F T = 150 C 0.83 1.0 j Pulse test: * t = 5 ms, < 2% p ** t = 380 s, < 2% p 2 To evaluate the conduction losses use the following equation: P = 0.8 x I + 0.0033 I F(AV) F (RMS) Table 6: Dynamic characteristics Symbol Parameter Test conditions Min Typ Max Unit t Reverse recovery T = 25 C I = 1 A dI /dt = 50 A/s V =30 V 66 90 ns rr j F F R time I = 1 A dI /dt = 200 A/s V =30 V 36 50 F F R I Reverse recovery T = 125 C I = 60 A V = 200 V 15 A RM j F R current dI /dt = 100 A/s F S Softness factor T = 125 C I = 60 A V = 200 V 0.4 factor j F R dI /dt = 100 A/s F t Forward recovery T = 25 C I = 60 A dI /dt = 200 A/s 600 ns fr j F F time V = 1.1 x V FR Fmax V Forward recovery T = 25 C I = 60 A dI /dt = 200 A/s 3.2 V FP j F F voltage V = 1.1 x V FR Fmax Figure 1: Conduction losses versus average Figure 2: Forward voltage drop versus forward forward current current P(W) I (A) FM 80 200 =0.5 =1 180 70 T =150C =0.2 J 160 (Maximum values) 60 140 =0.1 50 =0.05 120 T =150C J (Typical values) 40 100 80 30 60 20 T 40 10 T =25C 20 V (V) J I (A) FM (Maximum values) F(AV) 0 0 0 10 20304050 607080 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2/6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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