Product Information

STTH2002CR

STTH2002CR electronic component of STMicroelectronics

Datasheet
Rectifiers Hi EFFICIENCY ULTRAFAST DIODE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.7541 ea
Line Total: USD 3.75

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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STTH2002CR
STMicroelectronics

1 : USD 3.7541
10 : USD 1.4132
100 : USD 1.0563

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Product
Width
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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STTH2002C High efficiency ultrafast diode Datasheet - production data Features A1 K Suited for SMPS A2 Low losses K Low forward and reverse recovery times Low leakage current High junction temperature Insulated package: TO-220FPAB A2 Insulating voltage = 2000 V sine RMS A2 K K ECOPACK 2 compliant component for A1 A1 DPAK on demand K TO-220AB TO-220FPAB Description Dual center tap rectifier suited for switch mode power supplies and high frequency DC/DC converters. A2 K A1 2 Packaged in TO-220AB, TO-220FPAB, I PAK or 2 I PAK 2 D PAK, this device is intended for use in low K voltage, high frequency inverters, free wheeling K and polarity protection applications. Table 1: Device summary Symbol Value A2 A2 IF(AV) 2 x 10 A A1 A1 VRRM 200 V 2 D PAK T (max) 175 C j VF (typ) 0.78 V t (typ) 22 ns rr December 2015 DocID10176 Rev 3 1/16 www.st.com This is information on a product in full production. Characteristics STTH2002C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V I Forward rms current 30 A F(RMS) T = 150 C Per diode 10 C T = 140 C Per device 20 C TO-220AB, Average 2 2 D PAK, I PAK TC = 130 C Per diode 15 forward current I A F(peak) = 0.5, square TC = 115 C Per device 30 wave Per diode TC = 120 C 10 TO-220FPAB Per device TC = 85 C 20 Surge non IFSM repetitive tp = 10 ms sinusoidal 90 A forward current T Storage temperature range -65 to + 175 C stg (1) Tj Maximum operating junction temperature 175 C Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameter Symbol Parameter Value Unit Per diode 2.5 2 2 TO-220AB, D PAK, I PAK Per device 1.6 Junction to case Rth(j-c) C/W Per diode 5 TO-220FPAB Per device 3.8 2 2 TO-220AB, D PAK, I PAK 0.7 R Coupling - C/W th(c) TO-220FPAB 2.5 When the diodes 1 and 2 are used simultaneously: T = P x R + P x R j(diode1) (diode1) th(j-c) (per diode) (diode2) th(c) 2/16 DocID10176 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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