STTH1506TPI STMicroelectronics

STTH1506TPI Tandem 600V Hyperfast Rectifer MAJOR PRODUCTS CHARACTERISTICS I 15 A F(AV) 12 3 V 600 V (in series) RRM Tj (max) 150 C V (max) 2.6 V F I (typ.) 4.8 A RM 1 2 FEATURES AND BENEFITS 3 n Especially suited as boost diode in continuous mode power factor correctors and hard TOP3I switching conditions. (insulated) n Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks. n Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. DESCRIPTION n Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible The TURBOSWITCH H is an ultra high heatsinking on common or separate heatsink. performance diode composed of two 300V dice in n Matched diodes for typical PFC application series. TURBOSWITCH H family drastically cuts losses in the associated MOSFET when run at without need for voltage balance network. high dI /dt. F n C = 7pF ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol Parameter Value Unit V 600 V RRM Repetitive peak reverse voltage I 26 A F(RMS) RMS forward current I 130 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal T -65 +150 C stg Storage temperature range Tj + 150 C Maximum operating junction temperature TM: TURBOSWITCH is a trademark of STMicroelectronics May 2002 - Ed: 1A 1/5STTH1506TPI THERMAL AND POWER DATA Symbol Parameter Test conditions Value Unit R 2.9 C/W th (j-c) Junction to case Per diode R 0.3 th (c) Coupling R 1.6 th (j-c) Junction to case Total P 50 W 1 Conduction power dissipation for I =15A = 0.5 F(AV) both diodes Tc = 70C STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 20 A R Reverse leakage cur- V =V Tj = 25C R RRM rent 30 200 Tj = 125C V ** 3.6 V F Forward voltage drop I = 15A Tj=25C F 2.1 2.6 Tj = 125C Pulse test: * tp = 5ms, <2% ** tp = 380s, <2% To evaluate the maximum conduction losses use the following equation: 2 P=1.8xI + 0.053 x I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit trr 16 ns Reverse recovery I = 0.5 A Irr = 0.25A Tj = 25C F time I =1A R 35 I =1A dI /dt = - 50A/s F F V =30V R I 4.8 6.0 A RM Reverse recovery V = 400 V I =15A Tj = 125C R F current dI /dt = -200 A/s F S 0.4 - factor TURN-ON SWITCHING CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit tfr 200 ns Forward I =15A dI /dt = 100A/s, Tj = 25C F F recovery time V =1.1xV max FR F V 6V FP Forward I =15A dI /dt = 100 A/s Tj = 25C F F recovery voltage 2/5