Product Information

STT6N3LLH6

STT6N3LLH6 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 30V .025Ohm 6A STripFET VI
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

48: USD 0.8332 ea
Line Total: USD 39.99

1328 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 48  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
748 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

STT6N3LLH6
STMicroelectronics

1 : USD 0.6727
10 : USD 0.5598
30 : USD 0.5039
100 : USD 0.4482
500 : USD 0.4148
1000 : USD 0.3976

1328 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 48
Multiples : 1

Stock Image

STT6N3LLH6
STMicroelectronics

48 : USD 0.8332
98 : USD 0.4056
107 : USD 0.3709
200 : USD 0.3693
500 : USD 0.2946
1000 : USD 0.2924

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STT6N3LLH6 N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code V R max I P DSS DS(on) D TOT 0.025 (V = 10 V) 4 GS STT6N3LLH6 30 V 6 A 1.6 W 5 0.036 6 3 (V = 4.5 V) GS 2 1 R * Q industry benchmark DS(on) g SOT23-6L Extremely low on-resistance R DS(on) High avalanche ruggedness Low gate drive power losses Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) Table 1. Device summary Order code Marking Package Packaging STT6N3LLH6 STG1 SOT23-6L Tape and reel March 2014 DocID023012 Rev 3 1/12 This is information on a product in full production. www.st.comContents STT6N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 DocID023012 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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