Product Information

STPSC806G-TR

STPSC806G-TR electronic component of STMicroelectronics

Datasheet
STMicroelectronics Schottky Diodes & Rectifiers 600V Power Schottky 8A 10 nC No Reverse
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 2.869 ea
Line Total: USD 2869

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

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STPSC806G-TR
STMicroelectronics

1000 : USD 2.6892

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

STPSC806G-TR
STMicroelectronics

1000 : USD 2.6037
2000 : USD 2.4108

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STPSC806G-TR
STMicroelectronics

1 : USD 6.7142
10 : USD 4.4022

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STPSC806 600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature A K Particularly suitable in PFC boost diode function TO-220AC Description STPSC806D The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon K carbide substrate. The wide band gap material allows the design of a Schottky diode structure A with a 600 V rating. Due to the Schottky NC construction no recovery is shown at turn-off and 2 D PAK ringing patterns are negligible. The minimal STPSC806G capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC Table 1. Device summary operations in hard switching conditions. I 8 A F(AV) V 600 V RRM T 175 C j (max) Q 10 nC C (typ) November 2010 Doc ID 16286 Rev 3 1/8 www.st.com 8Characteristics STPSC806 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 18 A F(RMS) I Average forward current T = 115 C, = 0.5 8 A F(AV) c t = 10 ms sinusoidal, T = 25 C 30 p c Surge non repetitive forward I t = 10 ms sinusoidal, T = 125 C 24 A FSM p c current t = 10 s square, T = 25 C 120 p c I Repetitive peak forward current T = 115 C, T = 150 C, = 0.1, 30 A FRM c j T Storage temperature range -55 to +175 C stg T Operating junction temperature -40 to +175 C j Table 3. Thermal resistance Symbol Parameter Maximum value Unit R Junction to case 2.4 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C -20 100 j Reverse leakage (1) I V = V A R R RRM current T = 150 C - 150 1000 j T = 25 C -1.4 1.7 j (2) V Forward voltage drop I = 8 A V F F T = 150 C - 1.6 2.1 j 1. t = 10 ms, < 2% p 2. t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.2 x I + 0.113 x I F(AV) F (RMS) Table 5. Other parameters Symbol Parameter Test conditions Typ. Unit V = 400 V, I = 8 A dI /dt = -200 A/s r F F Q Total capacitive charge 10 nC c T = 150 C j V = 0 V, T = 25 C, F = 1 Mhz 450 r c C Total capacitance pF V = 400 V, T = 25 C, F = 1 Mhz 35 r c 2/8 Doc ID 16286 Rev 3

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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