Product Information

STPSC20H12WL

Name: STPSC20H12WL
Brand: STMicroelectronics
SKU: STPSC20H12WL_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STPSC20H12WL electronic component of STMicroelectronics

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Datasheet

Schottky Diodes & Rectifiers 1200V power Schottky silicon-carbide diode

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

600: USD 6.5325 ea
Line Total: USD 3919.5

0 - Global Stock

MOQ: 600 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Mon. 03 Jun MOQ : 600 Multiples : 1 STPSC20H12WL STMicroelectronics	600 : USD 9.5753 1000 : USD 9.4881 2000 : USD 9.4009 2500 : USD 9.3124 3000 : USD 9.2253 4000 : USD 9.1367 5000 : USD 9.0496 10000 : USD 8.961 20000 : USD 8.8725 50000 : USD 8.784

0 - WHS 2 Ships to you between Mon. 03 Jun to Wed. 05 Jun MOQ : 1 Multiples : 1 STPSC20H12WL STMicroelectronics	1 : USD 13.8347 10 : USD 11.9992

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Additional Infomation About Product

STPSC20H12 Datasheet 1200 V power Schottky silicon carbide diode Features A K No or negligible reverse recovery K Switching behavior independent of temperature K Robust high voltage periphery Operating from -40 C to 175 C Low V F A ECOPACK compliant component A NC K K DPAK TO-220AC Description The SiC diode, available in TO-220AC, DPAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low V Schottky diode F A structure with a 1200 V rating. DO-247 LL K Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Product status link STPSC20H12 Product summary Symbol Value I 20 A F(AV) V 1200 V RRM T 175 C j(max.) V 1.35 V F(max.) DS11651 - Rev 5 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPSC20H12 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 1200 V RRM j I Forward rms current 38 A F(RMS) (1) TO-220AC, DPAK, T = 155 C , DC current C I Average forward current 20 A F(AV) DO-247 LL, Tc = 150 C ,DC current TO-220AC, DPAK, T = 155 C, T = 175 C, = 0.1 78 C j I Repetitive peak forward current A FRM DO-247 LL, T = 150 C, T = 175 C, = 0.1 79 C j T = 25 C 140 C t = 10 ms sinusoidal p I T = 150 C 120 Surge non repetitive forward current A FSM C t = 10 s square T = 25 C 700 p C T Storage temperature range -65 to +175 C stg T Operating temperature range -40 to +175 C j 1. Value based on Rth(j-c) max. Table 2. Thermal parameters Symbol Parameter Typ. value Max. value Unit TO-220AC, DPAK 0.30 0.45 R Junction to case C/W th(j-c) DO-247 LL 0.40 0.55 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 10 120 j (1) V = V I Reverse leakage current A R R RRM T = 150 C - 60 800 j T = 25 C - 1.35 1.50 j (2) I = 20 A V Forward voltage drop V F F T = 150 C - 1.75 2.25 j 1. Pulse test: t = 10 ms, < 2% p 2. Pulse test: t = 500 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.07 x I + 0.059 x I F(AV) F (RMS) DS11651 - Rev 5 page 2/15

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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