Product Information

STPS640CBY-TR

STPS640CBY-TR electronic component of STMicroelectronics

Datasheet
STMicroelectronics Schottky Diodes & Rectifiers

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.3954 ea
Line Total: USD 988.5

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

Stock Image

STPS640CBY-TR
STMicroelectronics

2500 : USD 0.5127
5000 : USD 0.5076
10000 : USD 0.5026
15000 : USD 0.4975
20000 : USD 0.4926
25000 : USD 0.4876
30000 : USD 0.4828
50000 : USD 0.4779
100000 : USD 0.4732

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STPS640CBY-TR
STMicroelectronics

1 : USD 2.4308
10 : USD 0.9093
100 : USD 0.6806

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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STPS640C-Y Automotive power Schottky rectifier Datasheet production data Description A1 K This dual Schottky rectifier is designed for switch A2 mode power supplies and other power converters. K This device is intended for use in low and medium voltage operation, and in particular high frequency circuits where low switching losses are required (free wheeling and polarity protection) in automotive applications. A2 Table 1. Device summary A1 Symbol Value DPAK I 2 x 3 A STPS640CBY-TR F(AV) V 40 V RRM Features T 150 C j V 0.50 V Low forward voltage drop F (Typ) Very small conduction losses Negligible switching losses Extremely fast switching Low thermal resistance AEC-Q101 qualified. December 2013 DocID025068 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics STPS640C-Y 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 40 V RRM I Forward rms current 6 A F(RMS) per diode 3 I Average forward current, = 0.5, T = 135 C A F(AV) c per device 6 I Surge non repetitive forward current t = 10 ms sinusoidal, T = 25 C 75 A FSM p c I Peak repetitive reverse current t = 2 s, F = 1kHz 1 A RRM p P Repetitive peak avalanche power t = 1 s, T = 25 C 1300 W ARM p c T Storage temperature range -65 to +150 C stg T Operating junction temperature -40 to +150 C j Table 3. Thermal parameters Symbol Parameter Value Unit per diode 5.5 R Junction to case th(j-c) per device 3 C/W R coupling 0.5 th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C - - 100 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 2 10 mA j T = 25 C - - 0.63 j I = 3 A F T = 125 C - 0.50 0.57 j (2) V Forward voltage drop V F T = 25 C - - 0.84 j I = 6 A F T = 125 C - 0.67 0.72 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.42 x I + 0.050 x I F(AV) F (RMS) 2/8 DocID025068 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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