Product Information

STPS5045SG-TR

STPS5045SG-TR electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers PWR Schottky 50A 45V VRRM 0.48V Vf
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.9634 ea
Line Total: USD 963.4

970 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
970 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

STPS5045SG-TR
STMicroelectronics

1000 : USD 1.0956

970 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

STPS5045SG-TR
STMicroelectronics

1000 : USD 0.9634
2000 : USD 0.9441

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Series
Packaging
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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Additional Infomation About Product

STPS5045S Power Schottky rectifier Datasheet production data Features A Low forward voltage drop K A Very small conduction losses Negligible switching losses K Extremely fast switching Low thermal resistance 200 C maximum junction temperature A A Avalanche rated 2 D PAK STPS5045SG-TR Description This device is a dual center tap Schottky rectifier j suited for switch mode power supply and high Table 1. Device summary frequency DC to DC converters. Symbol Value 2 Packaged in D PAK, this device is especially intended for use in low voltage, high frequency I 50 A F(AV) inverters, freewheeling and polarity protection V 45 V RRM applications. Also ideal for PV cell-bypass diode T (max) 200 C for junction and smart junction boxes. j V (max) 0.48 V F June 2012 Doc ID022861 Rev 1 1/7 This is information on a product in full production. www.st.com 7Characteristics STPS5045S 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 90 A F(RMS) I Average forward current = 0.5 T = 135 C 50 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 600 A FSM p P Repetitive peak avalanche power t = 10 s T = 125 C 1200 W ARM p j T Storage temperature range -65 to +175 C stg (2) Maximum operating junction temperature in DC forward mode +200 C (1) T j Maximum operating junction temperature +175 C 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj 2. Maximum operating junction temperature only in DC forward mode Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 1.0 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C V = V 0.090 0.36 j R RRM (1) I Reverse leakage current T = 75 C V = 20 V 0.7 1.9 mA R j R T = 125 C V = V 65 185 j R RRM T = 25 C 0.55 0.61 j I = 50 A F T = 125 C 0.48 0.56 j (2) V Forward voltage drop V F I = 10 A 0.22 F T = 200 C j I =20 A 0.28 F 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.38 x I + 0.0036 I F(AV) F (RMS) 2/7 Doc ID022861 Rev 1

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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