Product Information

STPS30H100CTN

STPS30H100CTN electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers Hi Vltg pwr Schottky 2x15A 100V 0.67VF

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.9986 ea
Line Total: USD 7

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STPS30H100CTN
STMicroelectronics

1 : USD 6.9986
10 : USD 2.5323
100 : USD 2.0301
500 : USD 1.6669
1000 : USD 1.3783

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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STPS30H100C Datasheet 100 V power Schottky rectifier Features A1 K A2 Negligible switching losses Low leakage current Good trade off between leakage current and forward voltage drop K Avalanche rated ECOPACK 2 compliant A2 A2 K K A1 A1 Applications TO-220AB TO-247 Switching diode SMPS DC/DC converter LED lighting Description This dual Schottky rectifier is designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC-DC converters. Packaged in TO-200AB and TO-247, this STPS30H100C is optimized for use in high frequency inverters. Product status link STPS30H100C Product summary I 2 x 15 A F(AV) V 100 V RRM T (max) 175 C j V (typ) 0.64 V F DS1560 - Rev 9 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS30H100C Characteristics 1 Characteristics Table 1. Absolute Ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I Forward rms current 30 A F(RMS) T = 155 C Per diode 15 C I Average forward current, = 0.5 A F(AV) T = 150 C Per device 30 C I Surge non repetitive forward current t = 10 ms sinusoidal 250 A FSM p P Repetitive peak avalanche power t = 10 s , T = 125 C 778 W ARM p j T Storage temperature range -65 to +175 C stg (1) T +175 C j Maximum operating junction temperature 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Value Unit Per diode 1.6 R Junction to case C/W th(j-c) Total 0.9 R Coupling 0.10 C/W th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) DS1560 - Rev 9 page 2/12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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