Product Information

STPS20M120STN

STPS20M120STN electronic component of STMicroelectronics

Datasheet
STMicroelectronics Schottky Diodes & Rectifiers Pwr Schottky 20A 120V 0.47V VF

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STPS20M120STN
STMicroelectronics

1 : USD 4.8674
10 : USD 1.7502
100 : USD 1.4084
500 : USD 1.1599
1000 : USD 0.9611
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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STPS20M120S Datasheet 120 V power Schottky rectifier Features A K High current capability A Avalanche rated K Low forward voltage drop K High frequency operation ECOPACK 2 compliant A A K K A A Applications TO-220AB narrow leads IPAK Switching diode SMPS DC/DC converter LED lighting Notebook adapter Description This Schottky diode is suited for high frequency switch mode power supply. 2 Packaged in TO-220AB narrow leads and I PAK, the STPS20M120S is optimized for use in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. Product status STPS20M120S Product summary I 20 A F(AV) V 120 V RRM T (max) 150 C j V (typ) 0.63 V F DS8943 - Rev 3 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS20M120S Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified, anode terminals short circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 120 V RRM I Forward rms current 50 A F(RMS) I Average forward current = 0.5, square wave T = 125 C 20 A F(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal 240 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 1200 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature +150 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Value Unit R Junction to case 1.35 C/W th(j-c) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 55 275 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 20 50 mA j T = 25 C I = 5 A - 0.47 0.52 j F T = 25 C - 0.72 j I = 10 A F (2) V T = 125 C Forward voltage drop - 0.52 0.57 V F j T = 25 C - 0.84 j I = 20 A F T = 125 C - 0.63 0.69 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.54 x I + 0.0075 I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS8943 - Rev 3 page 2/12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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