Product Information

STPS16170CB-TR

STPS16170CB-TR electronic component of STMicroelectronics

Datasheet
STMicroelectronics Schottky Diodes & Rectifiers Hi Vltg Pwr SCHOTTKY RECTIFIER
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.3617 ea
Line Total: USD 904.25

41225 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
41225 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2500
Multiples : 2500

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STPS16170CB-TR
STMicroelectronics

2500 : USD 0.3617

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Height
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Operating Temperature Range
Type
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Cnhts
Hts Code
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Additional Infomation About Product

STPS16170C High voltage power Schottky rectifier Datasheet production data Description . This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies Table 1. Device summary . Symbol Value I 2 x 8 A F(AV) V 170 V RRM . 3 T 175 C j(max) . V 0.70 V F (Typ) 3 Features High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current Avalanche capability specified ECOPACK 2 compliant component for DPAK and DPAK on demand December 2015 DocID12540 Rev 4 1/12 This is information on a product in full production. www.st.com ,3Characteristics STPS16170C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at T = 25 C unless otherwise stated) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 170 V RRM I Forward rms current 20 A F(RMS) Per diode 8 I Average forward current, = 0.5, square wave T = 150 C A F(AV) c Total 16 I Surge non repetitive forward current t = 10 ms sinusoidal 75 A FSM p (1) P Repetitive peak avalanche power t = 10 s, T = 125 C 335 W ARM p j T Storage temperature range -65 to + 175 C stg (2) T Maximum operating junction temperature 175 C j 1. For pulse time duration derating, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 1 dPtot 2. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth(j-a) Table 3. Thermal parameters Symbol Parameter Value Unit Per diode 3 R Junction to case th(j-c) Total 1.8 C/W R Coupling 0.6 th(c) When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C -- 15 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - - 15 mA j T = 25 C - - 0.92 j I = 8 A F T = 125 C - 0.70 0.75 j (2) V Forward voltage drop V F T = 25 C -- 1.0 j I = 16 A F T = 125 C - 0.80 0.86 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.64 x I + 0.014 x I F(AV) F (RMS) 2/12 DocID12540 Rev 4

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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