Product Information

STPS15L60CB

STPS15L60CB electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers 2X7.5 Amp 60 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

114: USD 0.286 ea
Line Total: USD 32.6

1891 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 114  Multiples: 75
Pack Size: 75
Availability Price Quantity
1891 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 114
Multiples : 75

Stock Image

STPS15L60CB
STMicroelectronics

114 : USD 0.286
300 : USD 0.286
1125 : USD 0.286
3000 : USD 0.286
7500 : USD 0.286

191 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STPS15L60CB
STMicroelectronics

1 : USD 1.04
5 : USD 0.7254
25 : USD 0.6539
33 : USD 0.5005
90 : USD 0.4732

1588 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 21
Multiples : 1

Stock Image

STPS15L60CB
STMicroelectronics

21 : USD 0.3163

     
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RoHS - XON
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Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
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STPS15L60C Power Schottky rectifier Datasheet - production data Description Dual center tab Schottky rectifier suited for . switched mode power supply and high frequency DC to DC converters. Packaged in DPAK, this device is intended for use . in low voltage, high frequency inverters, free- . wheeling and polarity protection applications. Table 1. Device summary Symbol Value I 2 x 7.5 A . 3 F(AV) V 60 V RRM T 150 C j(max) Features V (typ) 0.52 V F Very small conduction losses Negligible switching losses Low forward voltage drop Avalanche specification ECOPACK 2 compliant component for DPAK on demand December 2015 DocID8621 Rev 4 1/8 This is information on a product in full production. www.st.comCharacteristics STPS15L60C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 10 A F(RMS) Per diode 7.5 Average forward current, = 0.5, square (1) I T = 135 C A F(AV) c wave Per device 15 I Surge non repetitive forward current t = 10 ms sinusoidal 75 A FSM p t = 10 s, T = 125 C P Repetitive peak avalanche power 265 W p j ARM T Storage temperature range -65 to +175 C stg (2) T Maximum operating junction temperature 150 C j 1. Value based on R max (per diode) th(j-c) dPtot 1 --------------- -------------------------- 2. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 4 R Junction to case th(j-c) Total 2.4 C/W R Coupling 0.7 th(c) When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test Conditions Min. Typ. Max. Unit T = 25 C 200 A j (1) I Reverse leakage current V = V R R RRM T = 125 C 45 60 mA j T = 25 C 0.62 j I = 7.5 A F T = 125 C 0.52 0.57 j T = 25 C 0.76 j (1) V Forward voltage drop I = 12 A V F F T = 125 C 0.62 0.68 j T = 25 C 0.82 j I = 15 A F T = 125 C 0.66 0.72 j 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.32 x I + 0.027 I F(AV) F (RMS) 2/8 DocID8621 Rev 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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