Product Information

STPS1545CGY-TR

STPS1545CGY-TR electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers Auto pwr Schottky 2x7.5A 45VRRM 0.57V
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.5436 ea
Line Total: USD 5.54

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STPS1545CGY-TR
STMicroelectronics

1 : USD 5.5436
10 : USD 2.0057
100 : USD 1.6157
500 : USD 1.326
1000 : USD 1.0976

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Additional Infomation About Product

STPS1545C-Y Automotive power Schottky rectifier Features A1 Very small conduction losses K A2 Negligible switching losses Extremely fast switching K Avalanche capability specified AEC-Q101 qualified A2 A1 Description 2 Dual center tap Schottky rectifier suited for high D PAK STPS1545CGY frequency DC to DC converters. 2 Packaged in D PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection Table 1. Device summary applications. I 2 x 7.5 A F(AV) V 45 V RRM T 175 C j (max) V 0.57 V F(max) May 2011 Doc ID 17263 Rev 1 1/7 www.st.com 7Characteristics STPS1545C-Y 1 Characteristics Table 2. Absolute Ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I RMS forward voltage 20 A F(RMS) I Average forward current = 0.5 T = 157 C Per diode 7.5 A F(AV) c t = 10 ms p I Surge non repetitive forward current 150 A FSM Sinusoidal t = 2 s square p I Peak repetitive reverse current 1A RRM F = 1 kHz I Non repetitive peak reverse current t = 100 s square 2 A RSM p P Repetitive peak avalanche power t = 1 s T = 25 C 2700 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature -40 to +175 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 --------------- -------------------------- 1. < condition to avoid thermal runaway for a diode on its own heatsink dTj Rth()j a Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 3.0 R Junction to case C/W th(j-c) Total 1.7 R Coupling 0.35 th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - - 100 A j (1) I Reverse leakage current V =V R R RRM T = 125 C - 5 15 mA j T = 125 C I = 7.5A - 0.5 0.57 j F (1) V Forward voltage drop T = 25 C I = 15 A -- 0.84 V F j F T = 125 C I = 15 A - 0.65 0.72 j F 1. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.42 x I + 0.020 I F(AV) F (RMS) 2/7 Doc ID 17263 Rev 1

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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