STPS10H100C High voltage power Schottky rectifier Datasheet - production data Description A1 K A2 Schottky barrier rectifier designed for high frequency miniature switched mode power K supplies such as adapters and on-board DC/DC converters. The product is packaged in TO-220AB, A2 TO-220FPAB, and DPAK. K A2 K A1 A1 Table 1: Device summary Symbol Value TO-220AB TO-220FPAB IF(AV) 2 x 5 A K K VRRM 100 V VF (typ.) 0.57 V A2 T (max.) 175 C A2 j A1 A1 DPAK Features High junction temperature capability for converters located in confined environment Low leakage current at high temperature Low static and dynamic losses as a result of the Schottky barrier Insulated package: TO-220FPAB Insulating voltage = 2000 V sine RMS Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand October 2016 DocID024444 Rev 2 1/15 www.st.com This is information on a product in full production. Characteristics STPS10H100C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V I Forward rms current 10 A F(RMS) Per diode 5 TO-220AB / T = 165 C C Average forward DPAK Per device 10 IF(AV) current A TC = 155 C Per diode 5 = 0.5, square wave TO-220FPAB T = 150 C Per device 10 C tp = 10 ms I Surge non repetitive forward current 180 A FSM sinusoidal t = 10 s, p PARM Repetitive peak avalanche power 515 W T = 125 C j Tstg Storage temperature range -65 to +175 C (1) T Maximum operating junction temperature 175 j Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Max. value Unit Per diode 4.5 TO-220FPAB Total 3.5 R Junction to case th(j-c) Per diode 2.2 TO-220AB / C/W DPAK Total 1.3 TO-220FPAB 2.5 Rth(c) Coupling TO-220AB / DPAK 0.3 When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) 2/15 DocID024444 Rev 2