Product Information

STP75N3LLH6

STP75N3LLH6 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 30V 0.0042 Ohm 75A STripFET VI

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6648 ea
Line Total: USD 0.66

2924 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2924 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STP75N3LLH6
STMicroelectronics

1 : USD 0.6648

2924 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 12
Multiples : 1

Stock Image

STP75N3LLH6
STMicroelectronics

12 : USD 0.6722

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 , 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET VI DeepGATE Power MOSFET Features TAB TAB Order codes V R max I DSS DS(on) D 3 1 STD75N3LLH6 < 0.0055 3 2 1 DPAK STP75N3LLH6 30 V 75 A IPAK STU75N3LLH6 < 0.0059 TAB STU75N3LLH6-S TAB R * Q industry benchmark DS(on) g 3 2 3 Extremely low on-resistance R 2 DS(on) 1 1 High avalanche ruggedness TO-220 Short IPAK Low gate drive power losses Application Figure 1. Internal schematic diagram Switching applications D (TAB or 2) Description This N-Channel Power MOSFET product utilizes th the 6 generation of design rules of STs proprietary STripFET technology, with a new G(1) gate structure.The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) S(3) AM01474v1 Table 1. Device summary Order codes Marking Package Packaging STD75N3LLH6 DPAK Tape and reel STP75N3LLH6 TO-220 75N3LLH6 STU75N3LLH6 IPAK Tube STU75N3LLH6-S Short IPAK July 2011 Doc ID 15978 Rev 4 1/21 www.st.com 21 Contents STD/P/U75N3LLH6, STU75N3LLH6-S Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Packaging mechanical data 18 6 Revision history . 20 2/21 Doc ID 15978 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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