Product Information

STP36N60M6

STP36N60M6 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 11.037 ea
Line Total: USD 110.37

671 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 10  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
671 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 10
Multiples : 1

Stock Image

STP36N60M6
STMicroelectronics

10 : USD 10.825
150 : USD 4.35
400 : USD 4.1875
2000 : USD 4.0125
4000 : USD 3.875

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

STP36N60M6, STW36N60M6 N-channel 600 V, 85 m typ., 30 A MDmesh M6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP36N60M6 600 V 99 m 30 A STW36N60M6 3 3 Reduced switching losses 2 2 1 Lower RDS(on) x area vs previous generation 1 Low gate input resistance 100% avalanche tested TO-247 TO-220 Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R * area improvement with one of the most DS(on) effective switching behaviors available, as well as a user-friendly experience for maximum end- application efficiency. Table 1: Device summary Order code Marking Package Packaging STP36N60M6 TO-220 36N60M6 Tube STW36N60M6 TO-247 March 2017 DocID028429 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STP36N60M6, STW36N60M6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 4.2 TO-247 package information ........................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028429 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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