Product Information

STP16N60M2

STP16N60M2 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1

Stock Image

STP16N60M2
STMicroelectronics

1000 : USD 1.0281
N/A

Obsolete
0 - WHS 2

MOQ : 1000
Multiples : 1000

Stock Image

STP16N60M2
STMicroelectronics

1000 : USD 1.1529
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

STP16N60M2
STMicroelectronics

1 : USD 2.1228
10 : USD 1.8716
100 : USD 1.6203
500 : USD 1.4947
1000 : USD 1.3692
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

STP16N60M2
STMicroelectronics

1 : USD 5.7431
10 : USD 2.0728
25 : USD 1.9553
N/A

Obsolete
0 - WHS 5

MOQ : 10
Multiples : 10

Stock Image

STP16N60M2
STMicroelectronics

10 : USD 0.7355
100 : USD 0.6326
250 : USD 0.6317
500 : USD 0.6191
N/A

Obsolete
0 - WHS 6

MOQ : 10
Multiples : 10

Stock Image

STP16N60M2
STMicroelectronics

10 : USD 0.7729
100 : USD 0.6538
250 : USD 0.6329
500 : USD 0.6317
1000 : USD 0.6191
N/A

Obsolete
     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Package Type
Operating Temperature Classification
Operating Temp Range
Pin Count
Drain-Source On-Volt
Number Of Elements
Continuous Drain Current
Power Dissipation
Rad Hardened
Polarity
Type
Mounting
Gate-Source Voltage Max
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP16N60M2 600 V 0.32 12 A STU16N60M2 3 2 TAB 1 TO-220 Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested 3 2 IPAK Zener-protected 1 Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB) These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding G(1) high efficiency converters. S(3) AM15572v1 tab Table 1: Device summary Order code Marking Package Packaging STP16N60M2 TO-220 16N60M2 Tube STU16N60M2 IPAK March 2015 DocID027198 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STP16N60M2, STU16N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 TO-220 type A package information ................................................ 11 4.2 IPAK (TO-251) Type A package information ................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027198 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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