STN1N20 N-channel 200 V, 1.2 , 1 A, SOT-223 MESH OVERLAY Power MOSFET Features Type V R max I DSS DS(on) D STN1N20 200 V < 1.5 1 A 4 100% avalanche tested 3 2 1 Application SOT-223 Switching applications Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY process. The new patented STrip Figure 1. Internal schematic diagram layout coupled with the companys proprietary edge termination structure, makes it suitable in converters for lighting applications. 3 - V Table 1. Device summary Order code Marking Package Packaging STN1N20 N1N20 SOT-223 Tape and reel June 2011 Doc ID 6772 Rev 3 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s)Contents STN1N20 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 6772 Rev 3 Obsolete Product(s) - Obsolete Product(s)