STL12P6F6 STMicroelectronics

STL12P6F6 P-channel 60 V, 0.13 typ., 12 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R I DS DS(on)max D STL12P6F6 60 V 0.16 10 V 12 A Very low on-resistance 1 2 Very low gate charge 3 4 High avalanche ruggedness Low gate drive power loss PowerFLAT 5x6 Applications Switching applications Figure 1. Internal schematic diagram Description This device is an P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low R in all DS(on) packages. * 6 0 Y Table 1. Device summary Order code Marking Package Packaging STL12P6F6 12P6F6 PowerFLAT 5x6 Tape and reel Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. July 2014 DocID024400 Rev 2 1/16 This is information on a product in full production. www.st.com 16Contents STL12P6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID024400 Rev 2