Product Information

STI260N6F6

STI260N6F6 electronic component of STMicroelectronics

Datasheet
MOSFET N-ch 60V 0.0024 Ohm 120 A STripFET VI
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 3.0865 ea
Line Total: USD 9.26

1927 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1927 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3
Multiples : 1

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STI260N6F6
STMicroelectronics

3 : USD 3.1018

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Series
Transistor Type
Brand
Factory Pack Quantity :
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Additional Infomation About Product

STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 , 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and IPAK packages Features Order codes V R max I DSS DS(on) D TAB TAB STI260N6F6 60 V < 0.003 120 A STP260N6F6 Low gate charge 3 3 2 Very low on-resistance 2 1 1 High avalanche ruggedness IPAK TO-220 Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET 4 DeepGATE technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest R in all packages. DS(on) 3 - V Table 1. Device summary Order codes Marking Package Packaging STI260N6F6 IPAK 260N6F6 Tube STP260N6F6 TO-220 January 2012 Doc ID 17467 Rev 5 1/14 www.st.com 14 Contents STI260N6F6, STP260N6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 13 2/14 Doc ID 17467 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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