Product Information

STH275N8F7-2AG

STH275N8F7-2AG electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 3.4156 ea
Line Total: USD 3415.6

7760 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
7760 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1000
Multiples : 1000

Stock Image

STH275N8F7-2AG
STMicroelectronics

1000 : USD 3.4156
2000 : USD 3.4156

7760 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1000
Multiples : 1000

Stock Image

STH275N8F7-2AG
STMicroelectronics

1000 : USD 3.4156

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 m typ., 180 A, STripFET F7 Power MOSFETs in HPAK-2 and HPAK-6 Datasheet - production data Features Order code V R max. I DS DS(on) D STH275N8F7-2AG 80 V 2.1 m 180 A STH275N8F7-6AG AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Applications Figure 1: Internal schematic diagram Switching applications Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH275N8F7-2AG HPAK-2 275N8F7 Tape and reel STH275N8F7-6AG HPAK-6 January 2017 DocID027223 Rev 4 1/18 www.st.com This is information on a product in full production. Contents STH275N8F7-2AG, STH275N8F7-6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 HPAK-2 package information ......................................................... 10 4.2 HPAK-6 package information ......................................................... 12 4.3 HPAK packing information ............................................................. 15 5 Revision history ............................................................................ 17 2/18 DocID027223 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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