Product Information

SMAJ15A-TR

SMAJ15A-TR electronic component of STMicroelectronics

Datasheet
Diode: transil; 400W; 16.7V; 16.4A; unidirectional; SMA

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.0724 ea
Line Total: USD 362

72750 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
2792 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

SMAJ15A-TR
STMicroelectronics

1 : USD 0.1733
10 : USD 0.1561
25 : USD 0.139
100 : USD 0.1218
250 : USD 0.1194
500 : USD 0.1194
1000 : USD 0.1194

4850 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 10000
Multiples : 5000

Stock Image

SMAJ15A-TR
STMicroelectronics

10000 : USD 0.1123
25000 : USD 0.1123
50000 : USD 0.1123

72750 - WHS 3


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 5000
Multiples : 5000

Stock Image

SMAJ15A-TR
STMicroelectronics

5000 : USD 0.0724
10000 : USD 0.0724
20000 : USD 0.0724
25000 : USD 0.0724
75000 : USD 0.0724

15641 - WHS 4


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

SMAJ15A-TR
STMicroelectronics

1 : USD 0.507
10 : USD 0.3718
25 : USD 0.3328
100 : USD 0.2392
150 : USD 0.1092

19400 - WHS 5


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 5000
Multiples : 5000

Stock Image

SMAJ15A-TR
STMicroelectronics

5000 : USD 0.1164
10000 : USD 0.114

4850 - WHS 6


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 5000
Multiples : 5000

Stock Image

SMAJ15A-TR
STMicroelectronics

5000 : USD 0.0808

2792 - WHS 7


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 61
Multiples : 1

Stock Image

SMAJ15A-TR
STMicroelectronics

61 : USD 0.139
100 : USD 0.1218
250 : USD 0.1194

     
Manufacturer
Product Category
Breakdown Voltage
Semiconductor Structure
Mounting
Case
Kind Of Package
Type Of Diode
Max Forward Impulse Current
Max Off-State Voltage
Leakage Current
Power Dissipation
Category
Brand Category
LoadingGif

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SMAJ Transil Features Peak pulse power: 400 W (10/1000 s) A 2.3 kW (8/20 s) Stand off voltage range: from 5 V to 188 V K Unidirectional and bidirectional types Unidirectional Bidirectional Low leakage current: SMA 0.2 A at 25 C (JEDEC DO-214AC) 1 A at 85 C Operating T : 150 C j max High power capability at T : j max 270 W (10/1000 s) Description JEDEC registered package outline The SMAJ Transil series has been designed to Complies with the following standards protect sensitive equipment against electrostatic IEC 61000-4-2 level 4 discharges according to IEC 61000-4-2, and MIL STD 883, method 3015, and electrical over 15 kV (air discharge) stress according to IEC 61000-4-4 and 5. These 8 kV (contact discharge) devices are generally used against surges below IEC 61000-4-5 (see Table 3 for surge level) 400 W (10/1000 s). MIL STD 883G, method 3015-7 Class 3B Planar technology makes these devices suitable 25 kV HBM (human body model) for high-end equipment and SMPS where low Resin meets UL 94, V0 leakage current and high junction temperature are required to provide reliability and stability over MIL-STD-750, method 2026 solderability time. EIA STD RS-481 and IEC 60286-3 packing SMAJ are packaged in SMA (SMA footprint in IPC 7531 footprint accordance with IPC 7531 standard). TM: Transil is a trademark of STMicroelectronics July 2010 Doc ID 5544 Rev 12 1/10 www.st.com 10Characteristics SMAJ 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation T initial = T 400 W PP j amb T Storage temperature range -65 to +150 C stg T Operating junction temperature range -55 to +150 C j T Maximum lead temperature for soldering during 10 s. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistances Symbol Parameter Value Unit R Junction to leads 30 C/W th(j-l) R Junction to ambient on printed circuit on recommended pad layout 120 C/W th(j-a) Figure 1. Electrical characteristics - definitions II II Symbol Parameter II II FF PPPP Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V CLCL BRBR RMRM II RM RM RMRM II I Peak pulse current RMRM II PP RMRM VV VV VV RMRM BRBR CLCL II II RR RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II PPPP II PPPP Figure 2. Pulse definition for electrical characteristics Repetitive pulse current t = rise time (s) r t = pulse duration time (s) p t t p r 2/10 Doc ID 5544 Rev 12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
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ST MICROELECTRONICS
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ST7
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STMICRELECTRONICS
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