PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P = 3 W with 17dB gain 500 MHz / 12.5 V OUT PowerSO-10RF Description (formed lead) The PD55003-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55003 boasts excellent gain, linearity and reliability thanks to STs latest LDMOS technology mounted in the PowerSO-10RF first true SMD plastic RF power package, the (straight lead) PowerSO-10RF. The PD55003s superior linearity performance makes it an ideal solution for car mobile radios. Figure 1. Pin connection The PowerSO-10RF plastic package is designed Source for high reliability, and is the first JEDEC- approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of Drain Gate assembly. Mounting recommendations are provided in application note AN1294, available on www.st.com. Table 1. Device summary Order code Package Packing PD55003-E PowerSO-10RF (formed lead) Tube PD55003S-E PowerSO-10RF (straight lead) Tube PD55003TR-E PowerSO-10RF (formed lead) Tape and reel PD55003STR-E PowerSO-10RF (straight lead) Tape and reel August 2011 Doc ID 12273 Rev 4 1/29 www.st.com 29Contents PD55003-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 Performance for the PowerSO-10RF formed lead . 7 4.2 Performance for the PowerSO-10RF straight lead 10 5 Typical performance (860 MHz) . 12 5.1 Performance for the PowerSO-10RF formed lead 12 6 Test circuit 13 7 Circuit layout 15 8 Common source s-parameter 16 9 Package mechanical data 22 10 Revision history . 28 2/29 Doc ID 12273 Rev 4