Product Information

MJD127T4

MJD127T4 electronic component of STMicroelectronics

Datasheet
Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.2318 ea
Line Total: USD 579.5

46075 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
2425 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 2500
Multiples : 2500

Stock Image

MJD127T4
STMicroelectronics

2500 : USD 0.2925
5000 : USD 0.2925
7500 : USD 0.2925
10000 : USD 0.2925

46075 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 2500
Multiples : 2500

Stock Image

MJD127T4
STMicroelectronics

2500 : USD 0.2318

2025 - WHS 3


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 3
Multiples : 1

Stock Image

MJD127T4
STMicroelectronics

3 : USD 0.4771
25 : USD 0.4173
57 : USD 0.2873
155 : USD 0.2717

14550 - WHS 4


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 2500
Multiples : 2500

Stock Image

MJD127T4
STMicroelectronics

2500 : USD 0.309
5000 : USD 0.3029

104275 - WHS 5


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 2500
Multiples : 2500

Stock Image

MJD127T4
STMicroelectronics

2500 : USD 0.3323
5000 : USD 0.3256

Read More Specifications

     
Manufacturer
Product Category
Polarisation
Kind Of Transistor
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Category
Brand Category
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Additional Infomation About Product

MJD122 MJD127 Complementary power Darlington transistors Features Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Applications 3 General purpose linear and switching 1 Description DPAK The devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain Figure 1. Internal schematic diagrams performance coupled with very low saturation voltage. NPN: R = 7 K PNP: R = 16 K 1 1 R = 70 R = 60 2 2 Table 1. Device summary Order codes Marking Polarity Package Packaging MJD122T4 MJD122 NPN DPAK Tape and reel MJD127T4 MJD127 PNP April 2009 Doc ID 3541 Rev 11 1/12 www.st.com 12 Content MJD122, MJD127 Content 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 3541 Rev 11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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