Product Information

M24C64-FMC6TG

M24C64-FMC6TG electronic component of STMicroelectronics

Datasheet
STMicroelectronics EEPROM 65 Kbit Serial I2C 1.7V to 5.5V EEPROM

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.1703 ea
Line Total: USD 851.5

33950 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
18 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

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M24C64-FMC6TG
STMicroelectronics

1 : USD 0.2738
10 : USD 0.2738

33950 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5000
Multiples : 5000

Stock Image

M24C64-FMC6TG
STMicroelectronics

5000 : USD 0.1703

3572 - WHS 3


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

M24C64-FMC6TG
STMicroelectronics

1 : USD 0.5669
10 : USD 0.4579
30 : USD 0.4034
100 : USD 0.3625
500 : USD 0.3298
1000 : USD 0.3134

9700 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5000
Multiples : 5000

Stock Image

M24C64-FMC6TG
STMicroelectronics

5000 : USD 0.26
10000 : USD 0.2548

9700 - WHS 5


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 99
Multiples : 1

Stock Image

M24C64-FMC6TG
STMicroelectronics

99 : USD 0.3997

     
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M24C64-W M24C64-R M24C64-F M24C64-DF 64-Kbit serial IC bus EEPROM Datasheet - production data Features 2 Compatible with all I C bus modes: 1 MHz 400 kHz 100 kHz PDIP8 (BN) Memory array: 64 Kbit (8 Kbyte) of EEPROM Page size: 32 byte Additional Write lockable page (M24C64-D order codes) TSSOP8 (DW) SO8 (MN) Single supply voltage: 169 mil width 150 mil width 1.7 V to 5.5 V over 40 C / +85 C 1.6 V to 5.5 V over 0 C / +85 C Write: Byte Write within 5 ms Page Write within 5 ms UFDFPN5 (MH) UFDFPN8 (MC) Random and sequential Read modes DFN8 - 2x3 mm DFN5 -1.7x1.4 mm Write protect of the whole memory array Enhanced ESD/Latch-Up protection More than 4 million Write cycles More than 200-years data retention WLCSP (CS) Thin WLCSP (CT) Packages PDIP8 ECOPACK2 SO8 ECOPACK2 TSSOP8 ECOPACK2 UFDFPN ECOPACK2 WLCSP WLCSP ECOPACK2 Unsawn wafer (CU) Unsawn wafer (each die is tested) March 2018 DS6638 Rev 36 1/54 This is information on a product in full production. www.st.comContents M24C64-W M24C64-R M24C64-F M24C64-DF Contents 1 Description . 6 2 Signal description . 9 2.1 Serial Clock (SCL) . 9 2.2 Serial Data (SDA) 9 2.3 Chip Enable (E2, E1, E0) 9 2.4 Write Control (WC) . 9 2.5 V (ground) 10 SS 2.6 Supply voltage (V ) 10 CC 2.6.1 Operating supply voltage (V ) . 10 CC 2.6.2 Power-up conditions . 10 2.6.3 Device reset 10 2.6.4 Power-down conditions . 10 3 Memory organization . 11 4 Device operation . 12 4.1 Start condition 13 4.2 Stop condition 13 4.3 Data input . 13 4.4 Acknowledge bit (ACK) 13 4.5 Device addressing 14 5 Instructions . 15 5.1 Write operations 15 5.1.1 Byte Write . 16 5.1.2 Page Write . 17 5.1.3 Write Identification Page (M24C64-D only) 18 5.1.4 Lock Identification Page (M24C64-D only) 18 5.1.5 ECC (Error Correction Code) and Write cycling 18 5.1.6 Minimizing Write delays by polling on ACK 19 5.2 Read operations 20 5.2.1 Random Address Read . 21 2/54 DS6638 Rev 36

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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