Product Information

LET9045C

LET9045C electronic component of STMicroelectronics

Datasheet
Transistors RF MOSFET RF Power LdmoST 45W 18.5dB 960MHz
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

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Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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LET9045C
STMicroelectronics

1 : USD 66.811
10 : USD 61.7992
N/A

Obsolete
0 - WHS 2

MOQ : 50
Multiples : 50

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LET9045C
STMicroelectronics

50 : USD 80.165
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

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LET9045C
STMicroelectronics

1 : USD 96.3776
5 : USD 94.6105
10 : USD 92.8958
25 : USD 89.7936
100 : USD 88.4846
250 : USD 84.2044
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

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LET9045C
STMicroelectronics

1 : USD 118.8499
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Series
Brand
Gate-Source Breakdown Voltage
Factory Pack Quantity :
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Additional Infomation About Product

LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P ( 28 V) = 45 W with 18.5 dB gain 960 OUT MHz P ( 36V) = 70 W with 18.5 dB gain 960 OUT MHz BeO free package M243 epoxy sealed In compliance with the 2002/95/EC European directive Figure 1. Pin out Description The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power 1 transistor designed for broadband commercial and industrial applications at frequencies up to 3 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in 2 common source mode at 28 V. It is ideal for base station applications requiring high linearity. 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Branding LET9045C M243 LET9045C April 2011 Doc ID 15443 Rev 4 1/10 www.st.com 10Maximum ratings LET9045C 1 Maximum ratings Table 2. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage -0.5 to +15 V GS I Drain current 9 A D P Power dissipation ( T = 70 C) 108 W DISS C T Max. operating junction temperature 200 C J T Storage temperature -65 to +150 C STG Table 3. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 1.2 C/W th(JC) 2/10 Doc ID 15443 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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